Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag and Ni for chalcogenides Bi-M-S von Takagaki, Y., Jenichen, B., Ramsteiner, M., Herfort, J.

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Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi–Cu–Se, Bi–Ag–Se, and Sb–Cu–Te alloys von Takagaki, Y., Jenichen, B., Ramsteiner, M., Trampert, A.

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Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence von Fernández-Garrido, S, Kaganer, V M, Hauswald, C, Jenichen, B, Ramsteiner, M, Consonni, V, Geelhaar, L, Brandt, O

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Structural change upon annealing of amorphous GeSbTe grown on Si(111) von Bragaglia, V., Jenichen, B., Giussani, A., Perumal, K., Riechert, H., Calarco, R.

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Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions von Takagaki, Y, Ramsteiner, M, Jahn, U, Jenichen, B, Trampert, A

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Epitaxial growth of Co2FeSi/MgO/GaAs(001) heterostructures using molecular beam epitaxy von Hoffmann, G., Jenichen, B., Herfort, J.

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Macro- and micro-strain in GaN nanowires on Si(111) von Jenichen, B, Brandt, O, Pfüller, C, Dogan, P, Knelangen, M, Trampert, A

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In situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si von Terker, M, Jenichen, B, Herfort, J, Trampert, A

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Cyclotron-resonance-assisted photocurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film von Dantscher, K.-M., Kozlov, D. A., Olbrich, P., Zoth, C., Faltermeier, P., Lindner, M., Budkin, G. V., Tarasenko, S. A., Bel'kov, V. V., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., Weiss, D., Jenichen, B., Ganichev, S. D.

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Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy von Gaucher, S., Jenichen, B., Kalt, J., Jahn, U., Trampert, A., Herfort, J.

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Ferromagnet/semiconductor/ferromagnet hybrid trilayers grown using solid-phase epitaxy von Gaucher, S, Jenichen, B, Herfort, J

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Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001)-the influence of the growth rate von Jenichen, B, Cheng, Z, Hanke, M, Herfort, J, Trampert, A

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Manifestation of axiotaxy induced by the (10.4) plane in high-temperature-grown bismuth telluride films on InP(111) von Takagaki, Y., Jenichen, B., Trampert, A.

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Epitaxial growth of Bi2Se3 layers on InP substrates by hot wall epitaxy von Takagaki, Y, Jenichen, B

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Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001) von Jenichen, B., Herfort, J., Jahn, U., Trampert, A., Riechert, H.

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Molecular beam epitaxy of graphene on ultra-smooth nickel: growth mode and substrate interactions von Wofford, J M, Oliveira, M H, Schumann, T, Jenichen, B, Ramsteiner, M, Jahn, U, Fölsch, S, Lopes, J M J, Riechert, H

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Ferromagnetic Heusler alloy Co2FeSi films on GaAs(1 1 0) grown by molecular beam epitaxy von Hentschel, T, Jenichen, B, Trampert, A, Herfort, J

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Volmer-Weber growth of AlSb on Si(111) von Proessdorf, A., Hanke, M., Jenichen, B., Braun, W., Riechert, H.

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Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates von Takagaki, Y., Papadogianni, A., Jenichen, B., Jahn, U., Bierwagen, O.

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Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles von Kaganer, V. M., Jenichen, B., Brandt, O., Fernández-Garrido, S., Dogan, P., Geelhaar, L., Riechert, H.

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