The relationship between economic freedom and peace von Jelloian, Alexander

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High-speed mid-infrared laser absorption spectroscopy of CO$$_2$$ for shock-induced thermal non-equilibrium studies of planetary entry von Jelloian, Christopher C., Minesi, Nicolas Q., Spearrin, R. Mitchell

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Multi-line Boltzmann regression for near-electronvolt temperature and CO sensing via MHz-rate infrared laser absorption spectroscopy von Minesi, Nicolas Q., Richmond, Miles O., Jelloian, Christopher C., Kuenning, Nicholas M., Nair, Anil P., Spearrin, R. Mitchell

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High-speed mid-infrared laser absorption spectroscopy of CO2 for shock-induced thermal non-equilibrium studies of planetary entry von Jelloian, Christopher C., Minesi, Nicolas Q., Spearrin, R. Mitchell

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Excited oxygen kinetics at electronvolt temperatures via 5-MHz RF-diplexed laser absorption spectroscopy von Minesi, Nicolas Q, Nair, Anil P, Richmond, Miles O, Kuenning, Nicholas M, Jelloian, Christopher C, Spearrin, R Mitchell

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High-speed mid-infrared laser absorption spectroscopy of CO\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepa... von Jelloian, Christopher C., Minesi, Nicolas Q., Spearrin, R. Mitchell

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Extended tuning of distributed-feedback lasers in a bias-tee circuit via waveform optimization for MHz-rate absorption spectroscopy von Nair, Anil P, Minesi, Nicolas Q, Jelloian, Christopher, Kuenning, Nicholas M, Spearrin, R Mitchell

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50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors von Nguyen, L.D., Brown, A.S., Thompson, M.A., Jelloian, L.M.

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155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators von Rosenbaum, S.E., Kormanyos, B.K., Jelloian, L.M., Matloubian, M., Brown, A.S., Larson, L.E., Nguyen, L.D., Thompson, M.A., Katehi, L.P.B., Rebeiz, G.M.

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High-performance submicrometer AlInAs-GaInAs HEMT's von Mishra, U.K., Brown, A.S., Jelloian, L.M., Hackett, L.H., Delaney, M.J.

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V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT's von Matloubian, M., Jelloian, L.M., Brown, A.S., Nguyen, L.D., Larson, L.E., Delaney, M.J., Thompson, M.A., Rhodes, R.A., Pence, J.E.

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Ultra-high-speed digital circuit performance in 0.2- mu m gate-length AlInAs/GaInAs HEMT technology von Mishra, U.K., Jensen, J.F., Brown, A.S., Thompson, M.A., Jelloian, L.M., Beaubien, R.S.

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InP-based HEMT's with Al/sub 0.48/In/sub 0.52/As/sub x/P/sub 1-x/ Schottky layers von Jelloian, L.M., Matloubian, M., Liu, T., Lui, M., Thompson, M.A.

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GaInAs/InP composite channel HEMT's von Matloubian, M., Jelloian, L.M., Lui, M., Liu, T., Larson, L.E., Nguyen, L.D., Le, M.V.

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650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors von Nguyen, L.D., Brown, A.S., Thompson, M.A., Jelloian, L.M., Larson, L.E., Matloubian, M.

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Impact of buffer layer design on the performance of AlInAs-GaInAs HEMTs von Mishra, U.K., Brown, A.S., Jelloian, L.M., Melendes, M.A., Thompson, M., Rosenbaum, S.E., Larson, L.E.

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IIA-6 High performance submicrometer AlInAs-GaInAs HEMT's von Mishra, U.K., Brown, A.S., Jelloian, L.M., Hackett, L.H., Delaney, M.J.

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Aerocapture as an Enhancing Option for Ice Giants Missions von Dutta, Soumyo, Afonso, Gonçalo, Albert, Samuel W, Ali, Hisham K, Allen, Gary A, Alunni, Antonella I, Arnold, James O, Austin, Alexander, Bailet, Gilles, Bhaskaran, Shyam, Cassell, Alan M, Chen, George T, Cohen, Ian J, Cutts, James A, Deshmukh, Rohan G, Dillman, Robert A, Calabuig, Guillermo Dominguez, D'Souza, Sarah N, Ellerby, Donald T, Falcone, Giusy, Fedele, Alberto, Feldman, Jay, Gardi, Roberto, Girija, Athul P, Hormigo, Tiago, Hill, Jeffrey P, Hume, Shayna, Jelloian, Christopher, Jha, Vandana, Johnson, Breanna J, Kluever, Craig A, Lebreton, Jean-Pierre, Lobbia, Marcus A, Lu, Ping, Lu, Ye, Lugo, Rafael A, Matz, Daniel A, Moses, Robert W, Munk, Michelle M, Nelessen, Adam P, Perez-Ayucar, Miguel, Powell, Richard W, Putnam, Zachary R, Rea, Jeremy R, Reddy, Sachin Alexander, Reimer, Thomas, Saikia, Sarag J, Özmen, Isil Sakraker, Sayanagi, Kunio, Schuster, Stephan, Scully, Jennifer, Sostaric, Ronald R, Sotin, Christophe, Spencer, David A, Tackett, Benjamin M, Trawny, Nikolas, Venkatapathy, Ethiraj, Wercinski, Paul F, Young, Cindy L

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InP-based HEMT' s with Al(0.48)In(0.52)As(x)P(1-x) Schottky layers von Jelloian, L M, Matloubian, M, Liu, T, Lui, M, Thompson, M A

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InP-based HEMT''s with Al(0.48)In(0.52)As(x)P(1-x) Schottky layers von Jelloian, L M, Matloubian, M, Liu, T, Lui, M, Thompson, M A

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