B cluster formation and dissolution in Si: A scenario based on atomistic modeling von Pelaz, Lourdes, Gilmer, G. H., Gossmann, H.-J., Rafferty, C. S., Jaraiz, M., Barbolla, J.

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Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures von Castrillo, P., Jaraiz, M., Pinacho, R., Rubio, J.E.

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The role of connexin43–Src interaction in astrocytomas: A molecular puzzle von Tabernero, A, Gangoso, E, Jaraíz-Rodríguez, M, Medina, J.M

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B diffusion and clustering in ion implanted Si: The role of B cluster precursors von Pelaz, L., Jaraiz, M., Gilmer, G. H., Gossmann, H.-J., Rafferty, C. S., Eaglesham, D. J., Poate, J. M.

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Carbon in silicon: Modeling of diffusion and clustering mechanisms von Pinacho, R., Castrillo, P., Jaraiz, M., Martin-Bragado, I., Barbolla, J., Gossmann, H.-J., Gilmer, G.-H., Benton, J.-L.

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Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach von Pinacho, R., Jaraiz, M., Castrillo, P., Martin-Bragado, I., Rubio, J. E., Barbolla, J.

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Comprehensive model of damage accumulation in silicon von Mok, K. R. C., Benistant, F., Jaraiz, M., Rubio, J. E., Castrillo, P., Pinacho, R., Srinivasan, M. P.

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Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon von Martin-Bragado, I., Castrillo, P., Jaraiz, M., Pinacho, R., Rubio, J. E., Barbolla, J.

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Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena von Jaraiz, M., Gilmer, G. H., Poate, J. M., de la Rubia, T. D.

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Predictive Simulation of Advanced Nano-CMOS Devices Based on kMC Process Simulation von Mok, K.R.C., Colombeau, B.., Benistant, F.., Teo, R.S., Yeong, S.H., Yang, B.., Jaraiz, M.., Chu, S.-F.S.

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Improved binary collision approximation ion implant simulators von Hernández-Mangas, J. M., Arias, J., Bailón, L., Jaraı́z, M., Barbolla, J.

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Simulation of cluster evaporation and transient enhanced diffusion in silicon von Rafferty, C. S., Gilmer, G. H., Jaraiz, M., Eaglesham, D., Gossmann, H.-J.

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The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy von Castrillo, P., Pinacho, R., Jaraiz, M., Rubio, J.E., Singer, J.

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraíz, M., Poate, J. M., Luftman, H. S., Haynes, T. E.

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Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation von Castrillo, P., Pinacho, R., Jaraiz, M., Rubio, J. E.

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Activation and deactivation of implanted B in Si von Pelaz, Lourdes, Venezia, V. C., Gossmann, H.-J., Gilmer, G. H., Fiory, A. T., Rafferty, C. S., Jaraiz, M., Barbolla, J.

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Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population von Mok, K. R. C., Jaraiz, M., Martin-Bragado, I., Rubio, J. E., Castrillo, P., Pinacho, R., Barbolla, J., Srinivasan, M. P.

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Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators von Martin-Bragado, I., Castrillo, P., Jaraiz, M., Pinacho, R., Rubio, J. E., Barbolla, J., Moroz, V.

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Diffusion and interactions of point defects in silicon: molecular dynamics simulations von Gilmer, G.H., Diaz de la Rubia, T., Stock, D.M., Jaraiz, M.

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Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena von Martin-Bragado, I., Jaraiz, M., Castrillo, P., Pinacho, R., Barbolla, J., De Souza, M. M.

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