Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes von Mayimele, M A, van Rensburg, J P. Janse, Auret, F D, Diale, M

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Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure von Coelho, S. M. M., Auret, F. D., Janse van Rensburg, P. J., Nel, J. M.

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Analysis of temperature dependent I – V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant von Mtangi, W., Auret, F.D., Nyamhere, C., Janse van Rensburg, P.J., Chawanda, M. Diale, A.

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Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons von Omotoso, E., Paradzah, A.T., Janse van Rensburg, P.J., Legodi, M.J., Auret, F.D., Igumbor, E., Danga, H.T., Diale, M., Meyer, W.E.

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Electrical characterization of He+ irradiated n-ZnO von Hayes, M., Auret, F. D., Janse van Rensburg, P. J., Nel, J. M., Wesch, W., Wendler, E.

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Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS von Mtangi, W., Auret, F. D., Meyer, W. E., Legodi, M. J., Janse van Rensburg, P. J., Coelho, S. M. M., Diale, M., Nel, J. M.

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Inductively coupled plasma induced deep levels in epitaxial n-GaAs von Auret, F.D., Janse van Rensburg, P.J., Meyer, W.E., Coelho, S.M.M., Kolkovsky, Vl, Botha, J.R., Nyamhere, C., Venter, A.

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Effects of high temperature annealing on single crystal ZnO and ZnO devices von Mtangi, W., Auret, F. D., Diale, M., Meyer, W. E., Chawanda, A., de Meyer, H., Janse van Rensburg, P. J., Nel, J. M.

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Unexpected properties of the inductively coupled plasma induced defect in germanium von Coelho, S.M.M., Auret, F.D., Janse van Rensburg, P.J., Nel, J.M.

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Dependence of Trap Concentrations in ZnO Thin Films on Annealing Conditions von Wenckstern, H. von, Biehne, G., Lorenz, M., Grundmann, M., Auret, F. D., Meyer, W. E., Rensburg, P. J. Janse van, Hayes, M., Nel, J. M.

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The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes von Omotoso, E., Meyer, W.E., Auret, F.D., Paradzah, A.T., Diale, M., Coelho, S.M.M., Janse van Rensburg, P.J.

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Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts von Taghizadeh, F., Janse van Rensburg, P.J., Ostvar, K., Meyer, W.E., Auret, F.D.

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Effects of 5.4 MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H–SiC von Omotoso, E., Meyer, W.E., Auret, F.D., Paradzah, A.T., Diale, M., Coelho, S.M.M., Janse van Rensburg, P.J., Ngoepe, P.N.M.

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A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals von Mtangi, W., Schmidt, M., Auret, F. D., Meyer, W. E., Janse van Rensburg, P. J., Diale, M., Nel, J. M., Das, A. G. M., Ling, F. C. C., Chawanda, A.

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The dependence of barrier height on temperature for Pd Schottky contacts on ZnO von Mtangi, W., Auret, F.D., Nyamhere, C., Janse van Rensburg, P.J., Chawanda, A., Diale, M., Nel, J.M., Meyer, W.E.

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A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques von Mtangi, W., Auret, F. D., Janse van Rensburg, P. J., Coelho, S. M. M., Legodi, M. J., Nel, J. M., Meyer, W. E., Chawanda, A.

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Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements von Mtangi, W., Auret, F.D., Chawanda, A., Janse van Rensburg, P.J., Coelho, S.M.M., Nel, J.M., Diale, M., van Schalkwyk, L., Nyamhere, C.

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Ar plasma induced deep levels in epitaxial n -GaAs von Venter, A., Nyamhere, C., Botha, J. R., Auret, F. D., Janse van Rensburg, P. J., Meyer, W. E., Coelho, S. M. M., Kolkovsky, V. l.

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Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band von Auret, F. Danie, Meyer, W.E., Janse van Rensburg, P.J., Hayes, M., Nel, J.M., von Wenckstern, Holger, Schmidt, H., Biehne, G., Hochmuth, H., Lorenz, M., Grundmann, M.

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Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation von Diale, M., Song, S.F., Vantomme, André, Auret, F. Danie, Meyer, Walter E., Temst, Kristiaan, Janse Van Rensburg, P.J.

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