Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes von Cha, Tae-Ho, Park, Dae-Gyu, Kim, Tae-Kyun, Jang, Se-Aug, Yeo, In-Seok, Roh, Jae-Sung, Park, Jin Won

Volltext

Influence of Hydrogen Incorporation on the Reliability of Gate Oxide Formed by Using Low-Temperature Plasma Selective Oxidation Applicable to Sub-50-nm W-Polymetal Gate Devices von LIM, Kwan-Yong, SUNG, Min-Gyu, KU, Ja-Chun, KIM, Jin-Woong, CHO, Heung-Jae, YONG SOO KIM, JANG, Se-Aug, SEUNG RYONG LEE, KIM, Kwangok, YANG, Hong-Seon, SOHN, Hyun-Chul, PYI, Seung-Ho

Volltext

Effect of gate hard mask and sidewall spacer structures on the gate oxide reliability of W∕WNx∕poly-Si gate MOSFET for high density DRAM applications von Lim, Kwan-Yong, Cho, Heung-Jae, Jang, Se-Aug, Kim, Yong Soo, Oh, Jae-Geun, Lee, Jung-Ho, Yang, Hong-Seon, Sohn, Hyun-Chul, Kim, Jin-Woong

Volltext

Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide von Cho, Heung-Jae, Lim, Kwan-Yong, Jang, Se-Aug, Lee, Jung-Ho, Oh, Jae-Geun, Kim, Yong Soo, Yang, Hong-Seon, Sohn, Hyun-Chul

Volltext

Junction leakage characteristics in modified LOCOS isolation structures with a nitride spacer von Jang, Se-Aug, Yeo, In-Seok, Kim, Young-Bog

Volltext

Reliability of Recess-channel Gate Cell Transistor under Gate-Induced Drain Leakage Stress and Positive Bias Fowler-Nordheim Gate Stress von Heung-Jae Cho, Yong Soo Kim, Se-Aug Jang, Tae-Yoon Kim, Kwan-Yong Lim, Min Gyu Sung, Moon Sig Joo, Seun Rryong Lee, Hong-Seon Yang, Jin-Woong Kim

Volltext

Control of the slope of field oxide edge and its effects on gate oxide reliability von JANG, S.-A, KIM, Y.-B, YEO, I.-S, LEG, S.-K

Volltext

Impact of Thin WSIX Insertion in Tungsten Polymetal Gate on Gate Oxide Reliability and Gate Contact Resistance von Min Gyu Sung, Kwan-Yong Lim, Heung-Jae Cho, Seung Ryong Lee, Se-Aug Jang, Hong-Seon Yang, Kwangok Kim, Noh-Jung Kwak, Hyun-Chul Sohn, Jin Woong Kim

Volltext

Study of Plasma Damage at Recess-Channel Gate (RG) Structure During Plasma Nitridation von Heung-Jae Cho, Tae-Yoon Kim, Se-Aug Jang, Hyun Ahn, Yong Soo Kim, Kwan-Yong Lim, Min Gyu Sung, Hong-Seon Yang, Seung-Ho Pyi, Jin Woong Kim

Volltext

Electrical Conduction in Aluminum Nitride von Jang, Se-Aug, Choi, Gyeong Man

Volltext

Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure von Yue, Jeffrey Mun Pun, Chim, Wai Kin, Cho, Byung Jin, Chan, Daniel Sin Hung, Qin, Wei Han, Kim, Young-Bog, Jang, Se-Aug, Yeo, In-Seok

Volltext

The role of polysilicon film in the suppression of bird's beak in poly-buffered LOCOS von Jang, Se-Aug, Han, Chung-Soo, Kim, Young-Bog, Yeo, In-Seok

Volltext

Low resistive tungsten dual polymetal gate process for high speed and high density memory devices von Yong Soo Kim, Kwan-Yong Lim, Min-Gyu Sung, Soo-Hyun Kim, Hong-Seon Yang, Heung-Jae Cho, Se-Aug Jang, Jae-Geun Oh, Kwangok Kim, Young-Kyun Jung, Tae-Woo Jung, Choon-Hwan Kim, Doek-Won Lee, Won Kim, Young-Hoon Kim, Kang-Sik Choi, Tae-Kyung Oh, Yun-Taek Hwang, Seung-Ho Pyi, Ja-chun Ku, Jin-Woong Kim

Volltext

Anomalous field-oxide-ungrowth phenomenon in recessed local oxidation of silicon isolation structure von CHO, B.-J, JANG, S.-A, KIM, Y.-B, LEE, D.-D, KIM, J.-C

Volltext

Effects of Dopants on the Complex Impedance and Dielectric Properties of Aluminum Nitride von Jang, Se-Aug, Choi, Gyeong Man

Volltext

Investigation of stress behaviors and mechanism of void formation in sputtered TiSix films von SUH, You-Seok, PARK, Dae-Gyu, JANG, Se-Aug

Volltext

Evaluation of double Spacer local oxidation of silicon (LOCOS) isolation process for sub-quarter micron design rule von JANG, S.-A, KIM, Y.-B, CHO, B.-J, KIM, J.-C

Volltext

Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices von Sung, Min Gyu, Lim, Kwan-Yong, Cho, Heung-Jae, Lee, Seung Ryong, Jang, Se-Aug, Kim, Yong Soo, Joo, Moon Sig, Lee, Ju-Hee, Kim, Tae-Yoon, Yang, Hong-Seon, Pyi, Seung-Ho, Kim, Jin Woong

Volltext

Dependence of Gate Interfacial Resistance on the Formation of Insulative Boron–Nitride for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor in Tungsten Dual Polygate Mem... von Sung, Min Gyu, Lim, Kwan-Yong, Cho, Heung-Jae, Kim, Yong-Soo, Hwang, Yun Taek, Jang, Se Aug, Yang, Hong-Seon, Ku, Ja Chun, Kim, Jin Woong

Volltext

Highly Scalable Saddle-Fin (S-Fin) Transistor for Sub-50nm DRAM Technology von Park, Sung-Wook, Hong, Sung-Joo, Kim, Jin-Woong, Jeong, Jae-Goan, Yoo, Kyung-Dong, Moon, Seung-Chan, Sohn, Hyun-Chul, Kwak, Noh-Jung, Cho, Yun-Seok, Baek, Seung-Joo, Park, Hyung-Soon, Yoon, Hyo Geun, Lee, Bong-Hoon, Kim, Jin-Soo, Hwang, Sun-Hwan, Lee, Lae-Hee, Cho, Heung-Jae, Cho, Sung Yoon, Chung, Chai-O, Kim, Kwang-Ok, Yoo, Min-Soo, Jang, Se-Aug, Lee, Sang-Don, Chung, Sung-Woong

Volltext