K‐band CMOS low‐noise amplifier with 180° phase shift function using cascode structure von Jang, Seongjin, Lee, Jaeyong, Park, Changkun

Volltext

Design of CMOS-Based Unit Channel of Beamforming Transceivers for FACS Applications von Jang, Seongjin, Lee, Hui Dong, Park, Bonghyuk, Jang, Seunghyun, Kong, Sunwoo, Park, Changkun

Volltext

Design of K-Band Power Amplifier with 180-Degree Phase- Shift Function Using Low-Power CMOS Process von Jang, Seongjin, Lee, Jaeyong, Lee, Jeong-Woo, Park, Changkun

Volltext

Ku-Band CMOS Power Amplifier with Three-Stack Power Stage to Enhance Output Power and Efficiency von Yang, Junhyuk, Lee, Jaeyong, Jang, Seongjin, Jeong, Hayeon, Kim, Choulyoung, Park, Changkun

Volltext

A 3.2 Gbps/pin 8 Gbit 1.0 V LPDDR4 SDRAM With Integrated ECC Engine for Sub-1 V DRAM Core Operation von Oh, Tae-Young, Chung, Hoeju, Park, Jun-Young, Lee, Ki-Won, Oh, Seunghoon, Doo, Su-Yeon, Kim, Hyoung-Joo, Lee, ChangYong, Kim, Hye-Ran, Lee, Jong-Ho, Lee, Jin-Il, Ha, Kyung-Soo, Choi, YoungRyeol, Cho, Young-Chul, Bae, Yong-Cheol, Jang, Taeseong, Park, Chulsung, Park, Kwangil, Jang, SeongJin, Choi, Joo Sun

Volltext

Design Techniques for L-C-L T-Type Wideband CMOS Phase Shifter with Suppressed Phase Error von Jang, Seongjin, Park, Changkun

Volltext

Ka-Band CMOS Power Amplifier Using Stacked Structure With Cascode-Like Operation von Kim, Taehun, Jeong, Hayeon, Jang, Seongjin, Lee, Jaeyong, Park, Changkun

Volltext

Determination of Mechanical Properties and Actuation Behaviors of Polypyrrole-Copper Bimorph Nanoactuators von Sul, O., Seongjin Jang, Eui-Hyeok Yang

Volltext

Ka-Band Three-Stack CMOS Power Amplifier with Split Layout of External Gate Capacitor for 5G Applications von Yang, Junhyuk, Lee, Jaeyong, Jang, Seongjin, Jeong, Hayeon, Park, Changkun

Volltext

Design Technique of K-Band CMOS Phase Shifter with L-C-L T-Type Low Pass Structure von Jang, Seongjin, Kim, Choul-Young, Park, Changkun

Volltext

Ka-Band GaN HEMT Phase Shifter With T-Type Structure for Beamforming Applications von Kim, Sunju, Jang, Seongjin, Lee, Jaeyong, Jeong, Hayeon, Kim, Ki-Jin, Park, Changkun

Volltext

FePt nanodot arrays with perpendicular easy axis, large coercivity,and extremely high density von Kim, Chaehyun, Loedding, Thomas, Jang, Seongjin, Zeng, Hao, Li, Zhen, Sui, Yucheng, Sellmyer, David J.

Volltext

Step-edge calibration of torsional sensitivity for lateral force microscopy von Sul, Onejae, Jang, Seongjin, Yang, Eui-Hyeok

Volltext

Magnetotransport in Fe3O4 nanoparticle arrays dominated by non-collinear surface spins von Jang, Seongjin, Kong, Wenjie, Zeng, Hao

Volltext

Efficient Photosensitization and High Optical Gain in a Novel Quantum-Dot-Sensitized Hybrid Photorefractive Nanocomposite at a Telecommunications Wavelength von Roy Choudhury, K., Sahoo, Y., Jang, S., Prasad, P. N.

Volltext

Analysis of dynamic retention characteristics of NWL scheme in high density DRAM von Myungjae Lee, Hyungshin Kwon, Jonghyoung Lim, Hongsun Hwang, SeongJin Jang, Yonghan Roh

Volltext

Broadband phase shifter von JANG SEONGJIN, PARK CHANG KUN

Volltext bestellen

Phase shifter capable of multiple angle phase shift von JANG SEONGJIN, PARK CHANG KUN

Volltext bestellen

Multi channel semiconductor device having multi dies and operation method thereof von Eom, Yoon-Joo, Jang, Seongjin, Choi, Junghwan, Park, Joon-Young, Choi, Joosun, Bae, Yongcheol, Lee, Won Young

Volltext bestellen

MULTI CHANNEL SEMICONDUCTOR DEVICE HAVING MULTI DIES AND OPERATION METHOD THEREOF von PARK, JOON-YOUNG, JANG, SEONGJIN, EOM, Yoon-Joo, BAE, YONGCHEOL, CHOI, JUNGHWAN, CHOI, JOOSUN, LEE, WON YOUNG

Volltext bestellen