Sequential Infiltration Synthesis for Line Edge Roughness Mitigation of EUV Resist von Baryshnikova, Marina, Simone, Danilo De, Knaepen, Werner, Kachel, Krzysztof, Chan, BT, Paolillo, Sara, Maes, Jan Willem, Roest, David De, Delgadillo, Paulina Rincon, Vandenberghe, Geert

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MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier von Deijkers, Johanna (Sanne) H., Jong, Arthur A., Mattinen, Miika J., Schulpen, Jeff J. P. M., Verheijen, Marcel A., Sprey, Hessel, Maes, Jan Willem, Kessels, Wilhelmus (Erwin) M. M., Bol, Ageeth A., Mackus, Adriaan J. M.

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Evaluation of plasma parameters on PEALD deposited TaCN von Piallat, Fabien, Beugin, Virginie, Gassilloud, Remy, Michallon, Philippe, Dussault, Laurent, Pelissier, Bernard, Asikainen, Timo, Maes, Jan Willem, Martin, François, Morin, Pierre, Vallée, Christophe

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MoS 2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier von Deijkers, Johanna (Sanne) H., de Jong, Arthur A., Mattinen, Miika J., Schulpen, Jeff J. P. M., Verheijen, Marcel A., Sprey, Hessel, Maes, Jan Willem, Kessels, Wilhelmus (Erwin) M. M., Bol, Ageeth A., Mackus, Adriaan J. M.

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Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector von Haider, Ali, Deng, Shaoren, Devulder, Wouter, Maes, Jan Willem, Girard, Jean-Marc, Khalil El Hajjam, Gabriel, Kar, Gouri Sankar, Opsomer, Karl, Detavernier, Christophe, Givens, Michael, Goux, Ludovic, Van Elshocht, Sven, Delhougne, Romain, Delabie, Annelies, Caymax, Matty, Swerts, Johan

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Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-κ/metal gate pMoSFET applications von CHANG, Vincent S, RAGNARSSON, Lars-Ake, HONG YU YU, AOULAICHE, Marc, CONARD, Thierry, KAIMIN YIN, SCHRAM, Tom, WILLEM MAES, Jan, DE GENDT, Stefan, BIESEMANS, Serge

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Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector von Haider, Ali, Deng, Shaoren, Devulder, Wouter, Maes, Jan Willem, Girard, Jean-Marc, Khalil El Hajjam, Gabriel, Kar, Gouri Sankar, Opsomer, Karl, Detavernier, Christophe, Givens, Michael, Goux, Ludovic, Van Elshocht, Sven, Delhougne, Romain, Delabie, Annelies, Caymax, Matty, Swerts, Johan

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New Mechanisms for Ozone-Based ALD Growth of High-k Dielectrics via Nitrogen-Oxygen Species von Jung, Sung-Hoon, Raisanen, Petri, Givens, Michael, Shero, Eric, Delabie, A., Swerts, Johan, Van Elshocht, S., Willem Maes, Jan

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(Invited) ALD Materials for the Integration of III-V Based Transistors von Givens, Michael, Tang, Fu, Xie, Qi, Maes, Jan Willem

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ALD of Ta(Si)N thin films using TDMAS as a reducing agent and as a Si precursor von ALEN, Petra, AALTONEN, Titta, RITALA, Mikko, LESKELÄ, Markku, SAJAVAARA, Timo, KEINONEN, Juhani, HOOKER, Jacob C, MAES, Jan Willem

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Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability von Putcha, Vamsi, Franco, Jacopo, Vais, Abhitosh, Kaczer, Ben, Xie, Qi, Maes, Jan Willem, Tang, Fu, Givens, Michael, Collaert, Nadine, Linten, Dimitri, Groeseneken, Guido

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Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability von Putcha, Vamsi, Franco, Jacopo, Vais, Abhitosh, Kaczer, Ben, Xie, Qi, Maes, Jan Willem, Tang, Fu, Givens, Michael, Collaert, Nadine, Linten, Dimitri, Groeseneken, Guido

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Catalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe Surfaces von Dhayalan, Sathish Kumar, Douhard, Bastien, Profijt, Harald B., Loo, Roger, Shimura, Yosuke, Rosseel, Erik, Maes, Jan Willem, Hikavyy, Andriy, Kenis, Karine, Vandervorst, Wilfried, Wostyn, Kurt

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Orientation Dependence of Si 1-x C x :P Growth and the Impact on FinFET Structures von Tolle, John, Weeks, K. Doran, Bauer, Matthias, Machkaoutsan, Vladimir, Maes, Jan Willem, Togo, Mitsuhiro, Brus, Stephan, Hikavyy, Andriy, Loo, Roger

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Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO[sub 2] Gate Dielectrics von Swerts, Johan, Peys, Nick, Nyns, Laura, Delabie, Annelies, Franquet, Alexis, Maes, Jan Willem, Van Elshocht, Sven, De Gendt, Stefan

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Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs von Rosseel, Erik, Profijt, Harald Benjamin, Hikavyy, Andriy Yakovitch, Tolle, John, Kubicek, Stefan, Mannaert, Geert, L'abbe, Caroline, Wostyn, Kurt, Horiguchi, Naoto, Clarysse, Trudo, Parmentier, Brigitte, Dhayalan, Sathishkumar, Bender, Hugo, Maes, Jan Willem, Mehta, Sandeep, Loo, Roger

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Ozone Based Atomic Layer Deposition of Hafnium Oxide and Impact of Nitrogen Oxide Species von Delabie, Annelies, Swerts, Johan, Elshocht, Sven Van, Jung, Sung-Hoon, Raisanen, Petri I., Givens, Michael E., Shero, Eric J., Peeters, Jozef, Machkaoutsan, Vladimir, Maes, Jan Willem

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(Invited) Current Status of High-k and Metal Gates in CMOS von Wilk, Glen D., Verghese, Mohith, Chen, Peijun, Maes, Jan Willem

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Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕SiO2 gate stacks von Saito, Shin-ichi, Torii, Kazuyoshi, Shimamoto, Yasuhiro, Tonomura, Osamu, Hisamoto, Digh, Onai, Takahiro, Hiratani, Masahiko, Kimura, Shin’ichiro, Manabe, Yukiko, Caymax, Matty, Maes, Jan Willem

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Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector von Haider, Ali, Deng, Shaoren, Devulder, Wouter, Maes, Jan Willem, Girard, Jean-Marc, Khalil El Hajjam, Gabriel, Kar, Gouri Sankar, Opsomer, Karl, Detavernier, Christophe, Givens, Michael, Goux, Ludovic, Van Elshocht, Sven, Delhougne, Romain, Delabie, Annelies, Caymax, Matty, Swerts, Johan

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