Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films von Zafar, Sufi, Jagannathan, Hemanth, Edge, Lisa F., Gupta, Devendra

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Quantification of local strain distributions in nanoscale strained SiGe FinFET structures von Mochizuki, Shogo, Murray, Conal E., Madan, Anita, Pinto, Teresa, Wang, Yun-Yu, Li, Juntao, Weng, Weihao, Jagannathan, Hemanth, Imai, Yasuhiko, Kimura, Shigeru, Takeuchi, Shotaro, Sakai, Akira

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High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction von Cooper, David, Bernier, Nicolas, Rouvière, Jean-Luc, Wang, Yun-Yu, Weng, Weihao, Madan, Anita, Mochizuki, Shogo, Jagannathan, Hemanth

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Nature of germanium nanowire heteroepitaxy on silicon substrates von Jagannathan, Hemanth, Deal, Michael, Nishi, Yoshio, Woodruff, Jacob, Chidsey, Christopher, McIntyre, Paul C.

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Superior PBTI Reliability for SOI FinFET Technologies and Its Physical Understanding von Wang, Miaomiao, Muralidhar, Ramachandran, Stathis, James H., Linder, Barry Paul, Jagannathan, Hemanth, Faltermeier, Jonathan

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Engineering High Dielectric Constant Materials for Band-Edge CMOS Applications von Jagannathan, Hemanth, Narayanan, Vijay, Brown, Stephen

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Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- \kappa/Metal-Gate nFinFETs for High-Performance Logic Applications von Maitra, K, Khakifirooz, A, Kulkarni, P, Basker, V S, Faltermeier, J, Jagannathan, H, Adhikari, H, Chun-Chen Yeh, Klymko, N R, Saenger, K, Standaert, T, Miller, R J, Doris, B, Paruchuri, V K, McHerron, D, O'Neil, J, Leobundung, E, Huiming Bu

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Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires von Jagannathan, Hemanth, Nishi, Yoshio, Reuter, Mark, Copel, Matthew, Tutuc, Emanuel, Guha, Supratik, Pezzi, Rafael P.

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(Invited) Laser Annealing in CMOS Manufacturing von Gluschenkov, Oleg, Jagannathan, Hemanth

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High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes von Clark, Robert D., Consiglio, Steve, Wajda, Cory, Leusink, Gert, Sugawara, Takuya, Nakabayashi, Hajime, Jagannathan, Hemanth, Edge, Lisa F., Jamison, Paul, Paruchuri, Vamsi, Iijima, Ryosuke, Takayanagi, Mariko, Linder, Barry, Bruley, J, Copel, Matt, Narayanan, Vijay

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Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices von Mochizuki, Shogo, Loesing, Rainer, Wang, Yun-Yu, Jagannathan, Hemanth

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Germanium out diffusion in SiGe-based HfO2 gate stacks von Martinez, Eugenie, Nolot, Emmanuel, Barnes, Jean-Paul, Mazel, Yann, Bernier, Nicolas, Muthinti, Raja, Jagannathan, Hemanth, Lee, Choonghyun, Gambacorti, Narciso

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SiO2 Free HfO2 Gate Dielectrics by Physical Vapor Deposition von Jamison, Paul C., Tsunoda, Takaaki, Tuan Anh Vo, Juntao Li, Jagannathan, Hemanth, Shinde, Sanjay R., Paruchuri, Vamsi K., Gall, Daniel

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Halide Passivation of Germanium Nanowires von Jagannathan, Hemanth, Kim, Jungyup, Deal, Michael, Kelly, Michael, Nishi, Yoshio

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BEOL Compatible High-Capacitance MIMCAP Structure Using a Novel High k Material von Jamison, Paul C., Massey, John, Ando, Takashi, Cartier, Eduard A., Jagannathan, Hemanth, Chen, P. J., Liu, Eric, Romero, Alex, Naczas, Sebastian, Narayanan, Vijay, Pancharatnam, Shanti, Restle, Phillip, Rubin, Joshua, Loubet, Nicolas J, Choi, Kisik

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Mechanism for Leakage Reduction by La Incorporation in a HfO2/SiO2/Si Gate Stack von MANABE, Kenzo, WATANABE, Koji, JAGANNATHAN, Hemanth, PARUCHURI, Vamsi K

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Measurement of oxygen diffusion in nanometer scale HfO 2 gatedielectric films von Zafar, Sufi, Jagannathan, Hemanth, Edge, Lisa F., Gupta, Devendra

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Mechanism for Leakage Reduction by La Incorporation in a \hbox\hbox\hbox Gate Stack von Manabe, K., Watanabe, K., Jagannathan, H., Paruchuri, V. K.

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Phenomena of Dielectric Capping Layer Insertion into High-κ Metal Gate Stacks in Gate-First/Gate-Last Integration von Jagannathan, Hemanth, Jamison, Paul, Paruchuri, Vamsi K.

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Integrating Phase-Change Memory Cell With Ge Nanowire Diode for Crosspoint Memory-Experimental Demonstration and Analysis von SangBum Kim, Yuan Zhang, McVittie, J.P., Jagannathan, H., Nishi, Y., Wong, H.-S.P.

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