Hot electron transport in heterostructures von Požela, J, Požela, K, Jucienė, V, Shkolnik, A

Volltext

Selective thermal terahertz emission from GaAs and AlGaAs von Požela, K., Širmulis, E., Kašalynas, I., Šilėnas, A., Požela, J., Jucienė, V.

Volltext

Thermally stimulated terahertz radiation of plasmon–phonon polaritons in GaAs von Sirmulis, E, Silenas, A, Pozela, K, Pozela, J, Juciene, V

Volltext

Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure von Pozela, J., Pozela, K., Juciene, V.

Volltext

Interaction of terahertz radiation with surface and interface plasmon–phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures von POZELA, J, POZELA, K, SILENAS, A, SIRMULIS, E, JUCIENE, V

Volltext

Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier von Požela, K., Šilėnas, A., Požela, J., Jucienė, V., Galiev, G. B., Vasil’evskii, J. S., Klimov, E. A.

Volltext

Thermally stimulated 3–15 THz emission at plasmon-phonon frequencies in polar semiconductors von Pozela, J, Pozela, K, Silenas, A, Sirmulis, E, Kasalynas, I, Juciene, V, Venckevicius, R

Volltext

X-ray luminescence spectra of graded-gap AlxGa1−xAs structures irradiated by alpha particle von Šilėnas, A., Požela, J., Požela, K., Jucienė, V., Dapkus, L.

Volltext

Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/AlxIn1 − xAs and In0.2Ga0.8As/AlxGa1 − xAs heterostructures in high electric fields von Požela, J., Požela, K., Raguotis, R., Jucienė, V.

Volltext

Light emitted GaAs particle detectors von Požela, J, Jucien≐, V, Požela, K

Volltext

Transport of electrons in a GaAs quantum well in high electric fields von Požela, J., Požela, K., Raguotis, R., Juciené, V.

Volltext

Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures von Vasil’evskii, I. S., Galiev, G. B., Klimov, E. A., Požela, K., Požela, J., Jucienė, V., Sužiedėlis, A., Žurauskienė, N., Keršulis, S., Stankevič, V.

Volltext

Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/Al x In1 − x As and In0.2Ga0.8As/Al x Ga1 − x As heterostructures in high electric fields von Požela, J., Požela, K., Raguotis, R., Jucienė, V.

Volltext

Interaction of electrons with optical phonons localized in a quantum well von Požela, J., Požela, K., Jucienė, V., Sužiedėlis, A., Shkolnik, A. S., Mikhrin, S. S., Mikhrin, V. S.

Volltext

Drift velocity of electrons in quantum wells in high electric fields von Mokerov, V. G., Vasil’evskii, I. S., Galiev, G. B., Požela, J., Požela, K., Sužiedėlis, A., Jucienė, V., Paškević, Č.

Volltext

Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields von Vasil’evskii, I. S., Galiev, G. B., Matveev, Yu. A., Klimov, E. A., Požela, J., Požela, K., Sužiedėlis, A., Paškevič, Č., Jucienė, V.

Volltext

Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures von Požela, J., Požela, K., Sužiedėlis, A., Jucienė, V., Petkun, V.

Volltext

Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields von Požela, K., Požela, J., Jucienė, V., Vasil'evskii, I.S., Galiev, G.B., Klimov, E.A., Sužiedėlis, A., Žurauskienė, N., Stankevič, V., Keršulis, S., Paškevič, Č.

Volltext

Transport Phenomena in Two-Dimensional Structures with Quantum Dots von Požela, J.

Volltext

A quantum-dot heterostructure transistor with enhanced maximum drift velocity of electrons von Mokerov, V., Požela, J., Požela, K., Juciene, V.

Volltext