Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology von Xapsos, M. A., Stauffer, C., Phan, A., McClure, S. S., Ladbury, R. L., Pellish, J. A., Campola, M. J., LaBel, K. A.

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Electron-Induced Single-Event Upsets in Static Random Access Memory von King, M. P., Reed, R. A., Weller, R. A., Mendenhall, M. H., Schrimpf, R. D., Sierawski, B. D., Sternberg, A. L., Narasimham, B., Wang, J. K., Pitta, E., Bartz, B., Reed, D., Monzel, C., Baumann, R. C., Deng, X., Pellish, J. A., Berg, M. D., Seidleck, C. M., Auden, E. C., Weeden-Wright, S. L., Gaspard, N. J., Zhang, C. X., Fleetwood, D. M.

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Effectiveness of SEL Hardening Strategies and the Latchup Domino Effect von Dodds, N. A., Hooten, N. C., Reed, R. A., Schrimpf, R. D., Warner, J. H., Roche, N. J., McMorrow, D., Wen, S., Wong, R., Salzman, J. F., Jordan, S., Pellish, J. A., Marshall, C. J., Gaspard, N. J., Bennett, W. G., Zhang, E. X., Bhuva, B. L.

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Impact of Ion Energy and Species on Single Event Effects Analysis von Reed, R.A., Weller, R.A., Mendenhall, M.H., Lauenstein, J.-M., Warren, K.M., Pellish, J.A., Schrimpf, R.D., Sierawski, B.D., Massengill, L.W., Dodd, P.E., Shaneyfelt, M.R., Felix, J.A., Schwank, J.R., Haddad, N.F., Lawrence, R.K., Bowman, J.H., Conde, R.

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The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate von Dodds, N. A., Martinez, M. J., Dodd, P. E., Shaneyfelt, M. R., Sexton, F. W., Black, J. D., Lee, D. S., Swanson, S. E., Bhuva, B. L., Warren, K. M., Reed, R. A., Trippe, J., Sierawski, B. D., Weller, R. A., Mahatme, N., Gaspard, N. J., Assis, T., Austin, R., Weeden-Wright, S. L., Massengill, L. W., Swift, G., Wirthlin, M., Cannon, M., Liu, R., Chen, L., Kelly, A. T., Marshall, P. W., Trinczek, M., Blackmore, E. W., Wen, S.-J, Wong, R., Narasimham, B., Pellish, J. A., Puchner, H.

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Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam von Dodds, N. A., Schwank, J. R., Shaneyfelt, M. R., Dodd, P. E., Doyle, B. L., Trinczek, M., Blackmore, E. W., Rodbell, K. P., Gordon, M. S., Reed, R. A., Pellish, J. A., LaBel, K. A., Marshall, P. W., Swanson, S. E., Vizkelethy, G., Van Deusen, S., Sexton, F. W., Martinez, M. J.

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New Insights Gained on Mechanisms of Low-Energy Proton-Induced SEUs by Minimizing Energy Straggle von Dodds, N. A., Dodd, P. E., Shaneyfelt, M. R., Sexton, F. W., Martinez, M. J., Black, J. D., Marshall, P. W., Reed, R. A., McCurdy, M. W., Weller, R. A., Pellish, J. A., Rodbell, K. P., Gordon, M. S.

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Selection of Well Contact Densities for Latchup-Immune Minimal-Area ICs von Dodds, N A, Hutson, J M, Pellish, J A, Reed, R A, Kim, H S, Berg, M D, Friendlich, M R, Phan, A M, Seidleck, C M, Xapsos, M A, Deng, X, Baumann, R C, Schrimpf, R D, King, M P, Massengill, L W, Weller, R A

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Predicting Thermal Neutron-Induced Soft Errors in Static Memories Using TCAD and Physics-Based Monte Carlo Simulation Tools von Warren, K.M., Sierawski, B.D., Weller, R.A., Reed, R.A., Mendenhall, M.H., Pellish, J.A., Schrimpf, R.D., Massengill, L.W., Porter, M.E., Wilkinson, J.D.

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Multiple-Bit Upset in 130 nm CMOS Technology von Tipton, A.D., Pellish, J.A., Reed, R.A., Schrimpf, R.D., Weller, R.A., Mendenhall, M.H., Sierawski, B., Sutton, A.K., Diestelhorst, R.M., Espinel, G., Cressler, J.D., Marshall, P.W., Vizkelethy, G.

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Evidence for Lateral Angle Effect on Single-Event Latchup in 65 nm SRAMs von Hutson, J.M., Pellish, J.A., Tipton, A.D., Boselli, G., Xapsos, M.A., Kim, H., Friendlich, M., Campola, M., Seidleck, S., LaBel, K., Marshall, A., Deng, X., Baumann, R., Reed, R.A., Schrimpf, R.D., Weller, R.A., Massengill, L.W.

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An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs von Sutton, A.K., Bellini, M., Cressler, J.D., Pellish, J.A., Reed, R.A., Marshall, P.W., Guofu Niu, Vizkelethy, G., Turowski, M., Raman, A.

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An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs von Sutton, A.K., Prakash, A.P.G., Bongim Jun, Enhai Zhao, Bellini, M., Pellish, J., Diestelhorst, R.M., Carts, M.A., Phan, A., Ladbury, R., Cressler, J.D., Marshall, Paul.W., Marshall, C.J., Reed, R.A., Schrimpf, R.D., Fleetwood, D.M.

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Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM von Heidel, D.F., Marshall, P.W., Pellish, J.A., Rodbell, K.P., LaBel, K.A., Schwank, J.R., Rauch, S.E., Hakey, M.C., Berg, M.D., Castaneda, C.M., Dodd, P.E., Friendlich, M.R., Phan, A.D., Seidleck, C.M., Shaneyfelt, M.R., Xapsos, M.A.

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Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs von Pellish, J.A., Reed, R.A., McMorrow, D., Vizkelethy, G., Cavrois, V.F., Baggio, J., Paillet, P., Duhamel, O., Moen, K.A., Phillips, S.D., Diestelhorst, R.M., Cressler, J.D., Sutton, A.K., Raman, A., Turowski, M., Dodd, P.E., Alles, M.L., Schrimpf, R.D., Marshall, P.W., LaBel, K.A.

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Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions von Sierawski, B.D., Pellish, J.A., Reed, R.A., Schrimpf, R.D., Warren, K.M., Weller, R.A., Mendenhall, M.H., Black, J.D., Tipton, A.D., Xapsos, M.A., Baumann, R.C., Xiaowei Deng, Campola, M.J., Friendlich, M.R., Kim, H.S., Phan, A.M., Seidleck, C.M.

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Assessing Alpha Particle-Induced Single Event Transient Vulnerability in a 90-nm CMOS Technology von Gadlage, M.J., Schrimpf, R.D., Narasimham, B., Pellish, J.A., Warren, K.M., Reed, R.A., Weller, R.A., Bhuva, B.L., Massengill, L.W., Xiaowei Zhu

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Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies von Pellish, J.A., Reed, R.A., Schrimpf, R.D., Alles, M.L., Varadharajaperumal, M., Guofu Niu, Sutton, A.K., Diestelhorst, R.M., Espinel, G., Krithivasan, R., Comeau, J.P., Cressler, J.D., Vizkelethy, G., Marshall, P.W., Weller, R.A., Mendenhall, M.H., Montes, E.J.

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A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations von Pellish, J.A., Reed, R.A., Sutton, A.K., Weller, R.A., Carts, M.A., Marshall, P.W., Marshall, C.J., Krithivasan, R., Cressler, J.D., Mendenhall, M.H., Schrimpf, R.D., Warren, K.M., Sierawski, B.D., Niu, G.F.

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Design Implications of Single Event Transients in a Commercial 45 nm SOI Device Technology von Kleinosowski, A.J., Cannon, E.H., Pellish, J.A., Oldiges, P., Wissel, L.

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