Terahertz oscillations in gallium nitride quantum-well channels predicted by hot-electron noise temperature behavior at microwave frequency von Ramonas, M., Liberis, J., Šimukovič, A., Šermukšnis, E., Matulionis, A., Avrutin, V., Özgür, Ü., Morkoç, H.

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Hot-electron energy relaxation time in Ga-doped ZnO films von Šermukšnis, E., Liberis, J., Ramonas, M., Matulionis, A., Toporkov, M., Liu, H. Y., Avrutin, V., Özgür, Ü., Morkoç, H.

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Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure von Šermukšnis, E., Liberis, J., Šimukovič, A., Matulionis, A., Ding, K., Avrutin, V., Özgür, Ü., Morkoç, H.

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Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation von Ardaravičius, L., Kiprijanovič, O., Ramonas, M., Šermukšnis, E., Liberis, J., Šimukovič, A., Matulionis, A., Ullah, Md. B., Ding, K., Avrutin, V., Özgür, Ü., Morkoç, H.

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Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels von Šermukšnis, E, Liberis, J, Matulionis, A, Avrutin, V, Ferreyra, R, Özgür, Ü, Morkoç, H

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Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels von Ardaravi ius, L, Kiprijanovi, O, Liberis, J, Šermukšnis, E, Matulionis, A, Ferreyra, R A, Avrutin, V, Özgür, Ü, Morkoç, H

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Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons von Leach, J. H., Zhu, C. Y., Wu, M., Ni, X., Li, X., Xie, J., Özgür, Ü., Morkoç, H., Liberis, J., Šermukšnis, E., Matulionis, A., Cheng, H., Kurdak, Ç.

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Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields von Ardaravičius, L., Ramonas, M., Liberis, J., Kiprijanovič, O., Matulionis, A., Xie, J., Wu, M., Leach, J. H., Morkoç, H.

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Electron drift velocity in AlGaN/GaN channel at high electric fields von Ardaravičius, L., Matulionis, A., Liberis, J., Kiprijanovic, O., Ramonas, M., Eastman, L. F., Shealy, J. R., Vertiatchikh, A.

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Hot-phonon lifetime in Al0.23Ga0.77N/GaN channels von Liberis, J, Ramonas, M, Šermukšnis, E, Sakalas, P, Szabo, N, Schuster, M, Wachowiak, A, Matulionis, A

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Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels von Matulionis, A, Liberis, J, Šermukšnis, E, Xie, J, Leach, J H, Wu, M, Morkoç, H

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High-field electron transport in doped ZnO von Ardaravi ius, L, Kiprijanovi, O, Liberis, J, Ramonas, M, Šermukšnis, E, Matulionis, A, Toporkov, M, Avrutin, V, Özgür, Ü, Morkoç, H

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InAlN-barrier HFETs with GaN and InGaN channels von Liberis, J., Matulionienė, I., Matulionis, A., Šermukšnis, E., Xie, J., Leach, J. H., Morkoç, H.

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Novel fluctuation-based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors von Matulionis, A., Liberis, J., Matulionienė, I., Šermukšnis, E., Leach, J. H., Wu, M., Morkoç, H.

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Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors von Šimukovi, A, Matulionis, A, Liberis, J, Šermukšnis, E, Sakalas, P, Zhang, F, Leach, J H, Avrutin, V, Morkoç, H

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Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelback channel von Ardaravi ius, L, Kiprijanovi, O, Liberis, J, Matulionis, A, Li, X, Zhang, F, Wu, M, Avrutin, V, Özgür, Ü, Morkoç, H

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Window for better reliability of nitride heterostructure field effect transistors von Matulionis, A., Liberis, J., Šermukšnis, E., Ardaravičius, L., Šimukovič, A., Kayis, C., Zhu, C.Y., Ferreyra, R., Avrutin, V., Özgür, Ü., Morkoç, H.

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Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN von Ardaravicˇius, L., Liberis, J., Kiprijanovicˇ, O., Matulionis, A., Wu, M., Morkoç, H.

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Hot-phonon temperature and lifetime in biased 4H-SiC von Matulionis, A., Liberis, J., Matulionienė, I., Cha, H.-Y., Eastman, L. F., Spencer, M. G.

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High frequency noise of epitaxial graphene grown on sapphire von Ardaravicˇius, L., Liberis, J., Šermukšnis, E., Matulionis, A., Hwang, J., Kwak, J. Y., Campbell, D., Alsalman, H. A., Eastman, L. F., Spencer, M. G.

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