Evaluation of GeO desorption behavior in the metal/GeO2/Ge structure and its improvement of the electrical characteristics von Oniki, Yusuke, Koumo, Hideo, Iwazaki, Yoshitaka, Ueno, Tomo

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Effects of Structural Transformation of Metal-GeO2 Interface on Electrical Properties von Koumo, Hideo, Oniki, Yusuke, Iwazaki, Yoshitaka, Ueno, Tomo

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Characteristic Change of GeO2/Ge Interface by Hf-Post Metallization Annealing von Fujiwara, Haruka, Iwazaki, Yoshitaka, Ueno, Tomo

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Characteristic Change of GeO 2 /Ge Interface by Hf-Post Metallization Annealing von Fujiwara, Haruka, Iwazaki, Yoshitaka, Ueno, Tomo

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Study on improvement of GeO2 film quality by plasma nitriding von Ito, Keisuke, Takahashi, Hiroki, Iwazaki, Yoshitaka, Ueno, Tomo

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Investigation of conductivity change of organic semiconductor by annealing von Taguchi, Hanto, Minakuchi, Keiichiro, Ueno, Tomo, Iwazaki, Yoshitaka

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Study of GeO2/Ge structure formed after Hf deposition von Horiguchi, Haruka, Ueno, Tomo, Iwazaki, Yoshitaka, Ino, Hirotaka

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Study on low driving voltage of organic thin film transistor von Minakuchi, Keiichuro, Ueno, Tomo, Iwazaki, Yoshitaka

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Fabrication of High-k/Ge Stacks with High Quality GeO 2 Interlayer von Suzuki, Yuya, Oniki, Yusuke, Iwazaki, Yoshitaka, Ueno, Tomo

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Reduction of Drive Voltage of Organic Thin Film Transistor by Increasing Dielectric Constant of Insulating Film von Hori, Kabuto, Minakuchi, Keiichiro, Matsushita, Seishi, Iwazaki, Yoshitaka, Ueno, Tomo

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Evaluation of plasma nitriding effect as gate insulating film surface treatment method of organic thin film transistor von Matsushita, Akihito, Minakuchi, Keiichiro, Hori, Kabuto, Iwazaki, Yoshitaka, Ueno, Tomo

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Characteristic change of GeO 2 / Ge interface by Hf-Post Metallization Annealing von Fujiwara, Haruka, Iwazaki, Yoshitaka, Ueno, Tomo, Hiroshi, Yamada, Namiki, Mitaro

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Manufacture and evaluation of High-k/GeO2/Ge von Watanabe, Ryuichirou, Toyoda, Kenichiro, Wachi, Syoutaro, Iwazaki, Yoshitaka, Ueno, Tomo

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Achievement of Excellent C-V Characteristics in GeO 2 /Ge System Using Post Metal Deposition Annealing von Koumo, Hideo, Suzuki, Yuya, Oniki, Yusuke, Iwazaki, Yoshitaka, Ueno, Tomo

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Fabrication and Evaluation of HfO2/Si Structure by Chemical Oxidation Method on Metal Hf/Si Structure von Oba, Hiroki, Iwazaki, Yoshitaka, Ueno, Tomo

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A Study for Improvement of GeO2 Water Absorbency by plasma Nitridization Treatment von Sekiya, Yosuke, Iwazaki, Yoshitaka, Ueno, Tomo

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The effect of Post Metallization Annealing for GeO2/Ge structures using CVD method von Hadano, Takumi, Iwazaki, Yoshitaka, Ueno, Tomo

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A study of Kr/O2 plasma treatment in GeO2/Ge structures von Tada, Yui, Iwazaki, Yoshitaka, Ueno, Tomo

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Characteristic change of GeO 2 / Ge interface by Hf-Post Metallization Annealing von Fujiwara, Haruka, Iwazaki, Yoshitaka, Ueno, Tomo, Yamada, Hiroshi, Namiki, Mitaro

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The effect of Post Metallization Annealing for GeO2/Ge structure using CVD method von Hadano, Takumi, Iwazaki, Yoshitaka, Ueno, Tomo

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