Atomic-scale variations in contact potential difference on Au/Si(111) 7×7 surface in ultrahigh vacuum von Kitamura, Shin'ichi, Suzuki, Katsuyuki, Iwatsuki, Masashi, Mooney, C.B

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High resolution imaging of contact potential difference using a novel ultrahigh vacuum non-contact atomic force microscope technique von Kitamura, Shinichi, Suzuki, Katsuyuki, Iwatsuki, Masashi

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Surface diffusion of adsorbed Si atoms on the Si(111) 7×7 surface studied by atom-tracking scanning tunneling microscopy von Sato, Tomoshige, Kitamura, Shin’ichi, Iwatsuki, Masashi

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Observation of silicon surfaces using ultrahigh-vacuum noncontact atomic force microscopy von KITAMURA, S, IWATSUKI, M

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High-temperature scanning tunneling microscopy study of the ‘16×2’⇔(1×1) phase transition on an Si(110) surface von Yamamoto, Youiti, Sueyoshi, Takashi, Sato, Tomoshige, Iwatsuki, Masashi

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Initial adsorption process of Si atoms on an Si(111)7×7 surface studied by scanning tunneling microscopy von Sato, Tomoshige, Kitamura, Shin-ichi, Iwatsuki, Masashi

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High-resolution imaging of contact potential difference with ultrahigh vacuum noncontact atomic force microscope von Kitamura, Shin’ichi, Iwatsuki, Masashi

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Intermolecular interaction and arrangements of adsorbed 1,4-cyclohexadiene molecules on Si( [formula omitted])(2×1) von Hamaguchi, Kanae, Mukai, Kozo, Yamashita, Yoshiyuki, Yoshinobu, Jun, Sato, Tomoshige, Iwatsuki, Masashi

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3aA_MI-2Stabilization of STEM image with relatively long acquisition time by using stabilized water chiller von Hamochi, Mitsuru, Ishii, Toshiya, Chisaka, Seiki, Komine, Kazushiro, Sawada, Hidetaka, Okunishi, Eiji, Iwatsuki, Masashi, Wakui, Shinji

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Observation of surface reconstruction on silicon above 800 °C using the STM von Kitamura, Shin-ichi, Sato, Tomoshige, Iwatsuki, Masashi

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Mapping Contact Potential Differences with Noncontact Atomic Force Microscope Using Resonance Frequency Shift versus Sample Bias Voltage Curves von Kitamura, Shin'ichi, Yonei, Kazunori, Iwatsuki, Masashi, Mooney, C. B., Fukuda, Yasuo

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SCANNING TUNNELING MICROSCOPY STUDY OF THE 16-STRUCTURE APPEARING ON A SI(110) SURFACE von YAMAMOTO, Y, KITAMURA, S, IWATSUKI, M

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Transformations of faulted halves of the DAS structure on quenched Si(111) von Shimada, Wataru, Tochihara, Hiroshi, Sato, Tomoshige, Iwatsuki, Masashi

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Formation of anomalously wide Si(111)× clean surface and its stability von Minoda, Hiroki, Sato, Tomoshige, Yagi, Katsumichi, Tanishiro, Yasumasa, Iwatsuki, Masashi

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High-temperature scanning tunneling microscopy study of the phase transition of 16-structure appearing on a Si(110) surface von YAMAMOTO, Y, SUEYOSHI, T, SATO, T, IWATSUKI, M

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Observation of Silicon Surfaces Using Ultrahigh Vacuum Noncontact Atomic Force Microscope von Kitamura, Shin'ichi, Suzuki, Katsuyuki, Iwatsuki, Masashi

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Development of Low Temperature Ultrahigh Vacuum Atomic Force Microscope/Scanning Tunneling Microscope von Suzuki, Katsuyuki, Iwatsuki, Masashi, Kitamura, Shin-ichi, Mooney, Charles B.

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Dynamic observation of Ag desorption process on Si(111) surface by high-temperature scanning tunneling microscopy von SATO, T, SUEYOSHI, T, KITAMURA, S.-I, IWATSUKI, M

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High-temperature scanning tunneling microscopy observation of a (15, 17, 1) facet structure on a Si(110) surface von YAMAMOTO, Y, SUEYOSHI, T, SATO, T, IWATSUKI, M

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Scanning Tunneling Microscopy of Clean Silicon Surfaces at Elevated Temperatures von Iwatsuki, Hiroshi Tokumoto

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