A stochastic algorithm for high speed capacitance extraction in integrated circuits von Le Coz, Y.L., Iverson, R.B.

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Performance of random-walk capacitance extractors for IC interconnects: A numerical study von Le Coz, Y.L., Greub, H.J., Iverson, R.B.

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Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2 von IVERSON, R. B, REIF, R

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Accurate high-speed performance prediction for full differential current-mode logic: the effect of dielectric anisotropy von Garg, A., Le Coz, Y.L., Greub, H.J., Iverson, R.B., Philhower, R.F., Campbell, P.M., Maier, C.A., Steidl, S.A., Ernest, M.W., Kraft, R.P., Carlough, S.R., Perry, J.W., Krawczyk, T.W., McDonald, J.F.

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Dose dependence of crystallization in implanted polycrystalline silicon films on SiO2 von IVERSON, R. B, REIF, R

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Recrystallization of amorphized polycrystalline silicon films on SiO2: temperature dependence of the crystallization parameters von IVERSON, R. B, REIF, R

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Large spontaneous nucleation rate in implanted polycrystalline silicon films on SiO2 von IVERSON, R. B, REIF, R

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Seed selection through ion channeling to modify crystallographic orientations of polycrystalline Si films on SiO2: implant angle dependence von KUNG, K. T.-Y, IVERSON, R. B, REIF, R

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Depth dependence of nucleation in implanted polycrystalline silicon films on SiO2 von IVERSON, R. B, REIF, R

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THEORY OF A FLOATING RANDOM-WALK ALGORITHM FOR SOLVING THE STEADY-STATE HEAT EQUATION IN COMPLEX, MATERIALLY INHOMOGENEOUS RECTILINEAR DOMAINS von Coz, Yannick L. Le, Iverson, Ralph B., Sham, T.-L., Tiersten, Harry F., Shephard, Mark S.

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Seed selection through ion channeling to produce uniformly oriented polycrystalline Si films on SiO2 von KUNG, K. T.-Y, IVERSON, R. B, REIF, R

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Development of a random-walk algorithm for IC-interconnect analysis: 2D TE benchmarks, materially homogeneous domains von Chatterjee, K., Iverson, R.B., Le Coz, Y.L.

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A floating random-walk algorithm for extracting electrical capacitance von Iverson, Ralph B., Le Coz, Yannick L.

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Dose dependence of crystallization in implanted polycrystalline silicon films on SiO sub(2) von Iverson, R B, Reif, R

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Measurement and modeling of high-speed interconnect-limited digital ring oscillators: The effect of dielectric anisotropy von Garg, A., Le Coz, Y.L., Greub, H.J., McDonald, J.F., Iverson, R.B.

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Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO sub 2 von Iverson, R B, Reif, R

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Seed selection through ion channeling to produce uniformly oriented polycrystalline Si films on SiO sub 2 von Kung, K T-Y, Iverson, R B, Reif, R

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A high-speed multi-dielectric capacitance-extraction algorithm for MCM interconnects von Le Coz, Y.L., Iverson, R.B.

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A methodology for full-chip extraction of interconnect capacitance using Monte Carlo-based field solvers von Iverson, R.B., Le Coz, Y.L.

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A multi-scale random-walk thermal-analysis methodology for complex IC-interconnect systems von Iverson, R.B., Le Coz, Y.L., Kleveland, B., Wong, S.S.

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