Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures von Kamalakar, M. Venkata, Dankert, André, Bergsten, Johan, Ive, Tommy, Dash, Saroj P.

Volltext

Causes of incorrect carrier-type identification in van der Pauw-Hall measurements von Bierwagen, Oliver, Ive, Tommy, Van de Walle, Chris G., Speck, James S.

Volltext

Step-flow growth of GaN(0001) on 4H-SiC(0001) by plasma-assisted molecular beam epitaxy von Tingberg, Tobias, Larsson, Anders, Ive, Tommy

Volltext

Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy von Adolph, David, Zamani, Reza R., Dick, Kimberly A., Ive, Tommy

Volltext

Effect of compositional interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors grown on SiC von Hashemi, Ehsan, Hjort, Filip, Stattin, Martin, Ive, Tommy, Bäcke, Olof, Lotsari, Antiope, Halvarsson, Mats, Adolph, David, Desmaris, Vincent, Meledin, Denis, Haglund, Åsa

Volltext

Nucleation and epitaxial growth of ZnO on GaN(0001) von Adolph, David, Ive, Tommy

Volltext

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers von ADOLPH, David, TINGBERG, Tobias, ANDERSSON, Thorvald, IVE, Tommy

Volltext

Controlled n -type doping of AlN:Si films grown on 6H-SiC(0001)by plasma-assisted molecular beam epitaxy von Ive, Tommy, Brandt, Oliver, Kostial, Helmar, Friedland, Klaus J., Däweritz, Lutz, Ploog, Klaus H.

Volltext

Impact of O2 flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy von Adolph, David, Ive, Tommy

Volltext

Impact of O sub(2) flow rate on the growth rate of ZnO(0001) and ZnO(000[Formulaomitted]) on GaN by plasma-assisted molecular beam epitaxy von Adolph, David, Ive, Tommy

Volltext

Impact of O 2 flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy: Impact of O2 flow rate on the growth of ZnO on GaN by PAMBE... von Adolph, David, Ive, Tommy

Volltext

Properties of InN layers grown on 6H–SiC(0001) by plasma-assisted molecular beam epitaxy von Ive, Tommy, Brandt, Oliver, Ramsteiner, Manfred, Giehler, Manfred, Kostial, Helmar, Ploog, Klaus H.

Volltext

Crack-free and conductive Si-doped AlN∕GaN distributed Bragg reflectors grown on 6H-SiC(0001) von Ive, Tommy, Brandt, Oliver, Kostial, Helmar, Hesjedal, Thorsten, Ramsteiner, Manfred, Ploog, Klaus H.

Volltext

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride von Kamalakar, M. Venkata, Dankert, André, Bergsten, Johan, Ive, Tommy, Dash, Saroj P.

Volltext

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology von Ive, Tommy, Berland, Kristian, Stattin, Martin, Fälth, Fredrik, Hyldgaard, Per, Larsson, Anders, Andersson, Thorvald G

Volltext

Investigation of Si and O Donor Impurities in Unintentionally Doped MBE-Grown GaN on SiC(0001) Substrate von Tingberg, Tobias, Ive, Tommy, Larsson, Anders

Volltext

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology von Ive, Tommy, Berland, Kristian, Stattin, Martin, Fälth, Fredrik, Hyldgaard, Per, Larsson, Anders, Andersson, Thorvald G.

Volltext

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy von Adolph, David, Tingberg, Tobias, Ive, Tommy

Volltext

Vertical Electrical Conductivity of ZnO/GaN Multilayers for Application in Distributed Bragg Reflectors von Hjort, Filip, Hashemi, Ehsan, Adolph, David, Ive, Tommy, Backe, Olof, Halvarsson, Mats, Haglund, Asa

Volltext

(Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) von Ive, Tommy, Brandt, Oliver, Kong Xiang, Trampert, Achim, Ploog, Klaus H.

Volltext