Milliwatt-power far-UVC AlGaN LEDs on sapphire substrates von Jo, Masafumi, Itokazu, Yuri, Hirayama, Hideki

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Controlled crystal orientations of semipolar AlN grown on an m-plane sapphire by MOCVD von Jo, Masafumi, Itokazu, Yuri, Kuwaba, Shunsuke, Hirayama, Hideki

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External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs von Khan, M. Ajmal, Itokazu, Yuri, Maeda, Noritoshi, Jo, Masafumi, Yamada, Yoichi, Hirayama, Hideki

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Enhanced Strain Relaxation in AlGaN Layers Grown on Sputter‐Based AlN Templates von Mogami, Yosuke, Osawa, Atsushi, Ozaki, Kazuto, Tanioka, Yukitake, Maeoka, Atsushi, Itokazu, Yuri, Kuwaba, Shunsuke, Jo, Masafumi, Maeda, Noritoshi, Yaguchi, Hiroyuki, Hirayama, Hideki

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Nonradiative recombination centers in deep UV-wavelength AlGaN quantum wells detected by below-gap excitation light von Hossain, M. Ismail, Itokazu, Yuri, Kuwaba, Shunsuke, Kamata, Norihiko, Maeda, Noritoshi, Hirayama, Hideki

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Impact of thermal treatment on the growth of semipolar AlN on m-plane sapphire von Jo, Masafumi, Morishita, Naoki, Okada, Narihito, Itokazu, Yuri, Kamata, Norihiko, Tadatomo, Kazuyuki, Hirayama, Hideki

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Superlattice period dependence on nonradiative recombination centers in the n-AlGaN layer of UV-B region revealed by below-gap excitation light von Hossain, M. Ismail, Itokazu, Yuri, Kuwaba, Shunsuke, Kamata, Norihiko, Maeda, Noritoshi, Hirayama, Hideki

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Milliwatt‐Power AlGaN Deep‐UV Light‐Emitting Diodes at 254 nm Emission as a Clean Alternative to Mercury Deep‐UV Lamps von Khan, Muhammad Ajmal, Maeda, Noritoshi, Itokazu, Yuri, Jo, Masafumi, Iimura, Kazuki, Hirayama, Hideki

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Significant improvement of injection efficiency in deep-UV LD structures by light Mg doping in p-core layer von Itokazu, Yuri, Maeda, Noritoshi, Yaguchi, Hiroyuki, Hirayama, Hideki

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Influence of the Strain Relaxation on the Optical Property of AlGaN Quantum Wells von Itokazu, Yuri, Mogami, Yosuke, Kuwaba, Shunsuke, Motegi, Shogo, Osawa, Atsushi, Maeoka, Atsushi, Osaki, Kazuto, Tanioka, Yukitake, Jo, Masafumi, Kamata, Norihiko, Hirayama, Hideki

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Improved simulation of AlN growth by using data assimilation von Jo, Masafumi, Itokazu, Yuri, Kuwaba, Shunsuke, Hirayama, Hideki

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Exceeding 30% IQE of AlGaN quantum well 304 nm UVB emission and single peak operation of 326nm UV LED von Khan, Muhammad Ajmal, Itokazu, Yuri, Matsumoto, Takuma, Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki, Kamata, Norihiko

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Optical properties of (11-22) AlGaN quantum wells grown on m-plane sapphire von Jo, Masafumi, Itokazu, Yuri, Hirayama, Hideki

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Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes von Itokazu, Yuri, Kuwaba, Shunsuke, Jo, Masafumi, Kamata, Norihiko, Hirayama, Hideki

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データ同化を用いたAlN成長シミュレーションの高精度化 von 定, 昌史, 糸数, 雄吏, 桑葉, 俊輔, 平山, 秀樹

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電流注入と光励起を用いたUV-LED内の欠陥準位の検出 von 白井, 草汰, 千代田, 夏樹, 鎌田, 憲彦, 糸数, 雄吏, 山初, 駿太, 平山, 秀樹

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Increased Strain Relaxation in AlGaN Layers Grown on Sputter-based AlN Templates von Mogami, Yosuke, Osawa, Atsushi, Ozaki, Kazuto, Tanioka, Yukitake, Maeoka, Atsushi, Itokazu, Yuri, Kuwaba, Shunsuke, Masafumi, Jo, Maeda, Noritoshi, Yaguchi, Hiroyuki, Hirayama, Hideki

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DCスパッタAlNテンプレート上UVC AlGaN LEDの作製と評価 von 最上, 耀介, 大澤, 篤史, 尾崎, 一人, 谷岡, 千丈, 前岡, 淳史, 糸数, 雄吏, 桑葉, 俊輔, 定, 昌史, 前田, 哲利, 矢口, 裕之, 平山, 秀樹

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