Crystal morphology of spherical silicon particles produced by jet-splitting method von Kuzuoka, Yoshikazu, Isomae, Seiichi, Yamaguchi, Yukio

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Intrinsic gettering of copper in silicon wafers von ISOMAE, Seiichi, ISHIDA, Hidetsugu, ITOGA, Toshihiko, HOZAWA, Kazuyuki

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COPPER DISTRIBUTION NEAR A SiO2/Si INTERFACE UNDER LOW-TEMPERATURE ANNEALING von Hozawa, K, Isomae, S, Yugami, J

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Hydrogen passivation of iron-related hole traps in silicon von Kouketsu, Masami, Isomae, Seiichi

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Gravitational stress-induced dislocations in large-diameter silicon wafers studied by X-ray topography and computer simulation von SHIMIZU, H, ISOMAE, S, MINOWA, K, SATOH, T, SUZUKI, T

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Effect of oxidizing ambient on oxygen precipitation in silicon crystals von KOHKETSU, M, ISOMAE, S

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Stress in silicon at Si3N4/SiO2 film edges and viscoelastic behavior of SiO2 films von ISOMAE, S

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Simultaneous Measurement of Size and Depth of Each Defect in a Silicon Wafer Using Light Scattering at Two Wavelengths: Principle, Limitation and Applications of Optical Shallow De... von Takeda, Kazuo, Isomae, Seiichi, Maeshima, MakotoOhkura, ShigeruMatsui, ShigeruMatsui

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Annealing behavior of MeV implanted carbon in silicon von ISOMAE, S, ISHIBA, T, ANDO, T, TAMURA, M

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Efficiency of Intrinsic Gettering for Copper in Silicon von Hozawa, Kazuyuki, Ishida, Hidetsugu, Isomae, Seiichi, Itoga, Toshihiko

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New Technique to Determine Gettering Efficiency of Heavy Metals and Its Application to Carbon-Ion-Implanted Si Epitaxial Wafers von Itoga, Toshihiko, Hozawa, Kazuyuki, Takeda, Kazuo, Isomae, Seiichi, Ohkura, Makoto

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Excellence of gate oxide integrity in metal-oxide-semiconductor large-scale-integrated circuits based on P-/P- thin-film epitaxial silicon wafers von SHIMIZU, H, SUGINO, Y, SUZUKI, N, KIYOTA, S, NAGASAWA, K, FUJITA, M, TAKEDA, K, ISOMAE, S

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Deep-level transient spectroscopy on p-type silicon crystals containing tungsten impurities von ANDO, T, ISOMAE, S, MUNAKATA, C, ABE, T

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Depth profiles of interstitial oxygen concentrations in silicon subjected to three-step annealing von ISOMAE, S, AOKI, S, WATANABE, K

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Stress effect on current-induced degradation of Be-doped AlGaAs/GaAs heterojunction bipolar transistors von MOCHIZUKI, K, ISOMAE, S, MASUDA, H, TANOUE, T, KUSANO, C

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Cavity Formation Due to Si3 N 4 / SiO2 Film‐Induced Stress in Silicon von Isomae, Seiichi, Tamaki, Yoichi

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Copper Distribution near a SiO 2 /Si Interface under Low-Temperature Annealing von Hozawa, Kazuyuki, Isomae, Seiichi, Yugami, Jiro

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Computer-aided simulation for oxygen precipitation in silicon von ISOMAE, S

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Cavity formation due to Si3N4/SiO2 film-induced stress in silicon von ISOMAE, S, TAMAKI, Y

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Suppression of oxidation-stacking-fault generation by preannealing in N2 atmosphere von Kishino, Seigô, Isomae, Seiichi, Tamura, Masao, Maki, Michiyoshi

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