Sample environment at the J-PARC MLF von Ohira-Kawamura, S., Oku, T., Watanabe, M., Takahashi, R., Munakata, K., Takata, S., Sakaguchi, Y., Ishikado, M., Ohuchi, K., Hattori, T., Kira, H., Sakai, K., Aso, T., Yamauchi, Y., Isomae, S.

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International Handbook of Practical Theology von Weyel, Birgit, Gräb, Wilhelm, Lartey, Emmanuel, Wepener, Cas

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Efficiency of Intrinsic Gettering for Copper in Silicon von Hozawa, Kazuyuki, Isomae, Seiichi, Ishida, Hidetsugu, Itoga, Toshihiko

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Hydrogen Passivation of Iron-Related Hole Traps in Silicon von Watanabe, K., Kouketsu, M., Isomae, Seiichi

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Rhombic Aggregation of Dislocations in CZ-Si Crystal von Minowa, K., Kitano, Michio, Isomae, Seiichi

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Intrinsic gettering of copper in silicon wafers von ISOMAE, Seiichi, ISHIDA, Hidetsugu, ITOGA, Toshihiko, HOZAWA, Kazuyuki

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A New Two-Dimensional Silicon Oxidation Model von Isomae, S., Yamamoto, S.

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Evaluation of dislocation generation on silicon substrates by selective oxidation von TAMAKI, Y, ISOMAE, S, MIZUO, S, HIGUCHI, H

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Oxidation-induced stress in a LOCOS structure von Isomae, S., Yamamoto, S., Aoki, S., Yajima, A.

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Hydrogen passivation of iron-related hole traps in silicon von Kouketsu, Masami, Isomae, Seiichi

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Computer-aided simulation for oxygen precipitation in silicon von ISOMAE, S

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COPPER DISTRIBUTION NEAR A SiO2/Si INTERFACE UNDER LOW-TEMPERATURE ANNEALING von Hozawa, K, Isomae, S, Yugami, J

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Cavity formation due to Si3N4/SiO2 film-induced stress in silicon von ISOMAE, S, TAMAKI, Y

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Gravitational stress-induced dislocations in large-diameter silicon wafers studied by X-ray topography and computer simulation von SHIMIZU, H, ISOMAE, S, MINOWA, K, SATOH, T, SUZUKI, T

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Lattice mismatch and crystal system in epitaxial garnet films von Isomae, S., Kishino, S., Takahashi, M.

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Creep curve of silicon wafers von Isomae, S., Nanba, M., Tamaki, Y., Maki, M.

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Influence of fluorine on oxidation-induced stacking faults von Isomae, S., Tamura, H., Tsuyama, H.

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Stress distributions in silicon crystal substrates with thin films von Isomae, Seiichi

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X-ray crystal truncation rod scattering analysis of reactive ion etched silicon von Isomae, Seiichi, Ohkura, Makoto, Maki, Michiyoshi, Matsuda, Yasushi

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Evaluation of Dislocation Generation at Si3 N 4 Film Edges on Silicon Substrates by Selective Oxidation von Tamaki, Y., Isomae, S., Mizuo, S., Higuchi, H.

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