Electronic properties of hafnium oxide: A contribution from defects and traps von Gritsenko, Vladimir A., Perevalov, Timofey V., Islamov, Damir R.

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TURKEY’S POLICY IN THE BALKANS: A FACTOR OF «COVID DIPLOMACY von Islamov, Damir

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Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes von Pil’nik, Andrey A., Chernov, Andrey A., Islamov, Damir R.

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Charge transport mechanism in dielectrics: drift and diffusion of trapped charge carriers von Pil’nik, Andrey A., Chernov, Andrey A., Islamov, Damir R.

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Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers von Gritsenko, Vladimir A, Islamov, Damir R, Perevalov, Timofey V, Aliev, Vladimir Sh, Yelisseyev, Alexander P, Lomonova, Elena E, Pustovarov, Vladimir A, Chin, Albert

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EU ANTI-COVID POLICY IN THE WESTERN BALKANS von Islamov, Damir

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Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films von Islamov, Damir R., Gritsenko, Vladimir A., Perevalov, Timofey V., Pustovarov, Vladimir A., Orlov, Oleg M., Chernikova, Anna G., Markeev, Andrey M., Slesazeck, Stefan, Schroeder, Uwe, Mikolajick, Thomas, Krasnikov, Gennadiy Ya

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Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon von Islamov, Damir R, Gritsenko, V A, Perevalov, T V, Orlov, O M, Krasnikov, G Ya

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Impact of lanthanum doping on the electronic structure of oxygen vacancies in hafnium oxide von Perevalov, Timofey V., Islamov, Damir R.

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Leakage currents mechanism in thin films of ferroelectric Hf0.5Zr0.5O2 von Islamov, Damir R, Chernikova, A G, Kozodaev, M G, Markeev, A M, Perevalov, T V, Gritsenko, V A, Orlov, O M

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European integration as a factor in the process of the Montenegrin state-building von Islamov, Damir R.

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Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide von Islamov, Damir R., Zalyalov, Timur M., Orlov, Oleg M., Gritsenko, Vladimir A., Krasnikov, Gennady Ya

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CPU vs RAM in the Issue of ab initio Simulations of Doped Hafnium Oxide for RRAM and FRAM

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Electron and hole bipolar injection in magnesium oxide films von Perevalov, Timofey V., Islamov, Damir R., Zalyalov, Timur M., Gismatulin, Andrei A., Golyashov, Vladimir A., Tereshchenko, Oleg E., Gorshkov, Dmitry V., Gritsenko, Vladimir A.

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The charge transport mechanism and electron trap nature in thermal oxide on silicon von Islamov, Damir R., Gritsenko, Vladimir A., Perevalov, Timofey V., Orlov, Oleg M., Krasnikov, Gennady Ya

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Oxygen Polyvacancies as Conductive Filament in Zirconia: First Principle Simulation von Perevalov, Timofey V., Islamov, Damir R.

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Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II—Films von Islamov, Damir R., Gritsenko, Vladimir A., Perevalov, Timofey V., Aliev, Vladimir Sh, Nadolinny, Vladimir A., Chin, Albert

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Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part I—Crystals von Islamov, Damir R., Gritsenko, Vladimir A., Perevalov, Timofey V., Yelisseyev, Alexander P., Pustovarov, Vladimir A., Korolkov, Ilya V., Lomonova, Elena E.

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Determination of Trap Density in Hafnium Oxide Films Produced by Different Atomic Layer Deposition Techniques von Islamov, Damir R., Gritsenko, Vladimir A., Lebedev, Mikhail S.

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(Invited) The Influence of Defects on the Electronic Properties of Hafnia von Islamov, Damir R., Gritsenko, Vladimir A., Perevalov, Timofey V.

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