Strain engineering and epitaxial stabilization of halide perovskites von Chen, Yimu, Lei, Yusheng, Li, Yuheng, Yu, Yugang, Cai, Jinze, Chiu, Ming-Hui, Rao, Rahul, Gu, Yue, Wang, Chunfeng, Choi, Woojin, Hu, Hongjie, Wang, Chonghe, Li, Yang, Song, Jiawei, Zhang, Jingxin, Qi, Baiyan, Lin, Muyang, Zhang, Zhuorui, Islam, Ahmad E., Maruyama, Benji, Dayeh, Shadi, Li, Lain-Jong, Yang, Kesong, Lo, Yu-Hwa, Xu, Sheng

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Epidermal Electronics von Kim, Dae-Hyeong, Lu, Nanshu, Ma, Rui, Kim, Yun-Soung, Kim, Rak-Hwan, Wang, Shuodao, Wu, Jian, Won, Sang Min, Tao, Hu, Islam, Ahmad, Yu, Ki Jun, Kim, Tae-il, Chowdhury, Raeed, Ying, Ming, Xu, Lizhi, Li, Ming, Chung, Hyun-Joong, Keum, Hohyun, McCormick, Martin, Liu, Ping, Zhang, Yong-Wei, Omenetto, Fiorenzo G., Huang, Yonggang, Coleman, Todd, Rogers, John A.

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Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications von Islam, Ahmad E., Rogers, John A., Alam, Muhammad A.

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Efficient Closed-loop Maximization of Carbon Nanotube Growth Rate using Bayesian Optimization von Chang, Jorge, Nikolaev, Pavel, Carpena-Núñez, Jennifer, Rao, Rahul, Decker, Kevin, Islam, Ahmad E., Kim, Jiseob, Pitt, Mark A., Myung, Jay I., Maruyama, Benji

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Insight on Structure of Water and Ice Next to Graphene Using Surface-Sensitive Spectroscopy von Singla, Saranshu, Anim-Danso, Emmanuel, Islam, Ahmad E., Ngo, Yen, Kim, Steve S., Naik, Rajesh R., Dhinojwala, Ali

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Biomarkers and Detection Platforms for Human Health and Performance Monitoring: A Review von Sim, Daniel, Brothers, Michael C., Slocik, Joseph M., Islam, Ahmad E., Maruyama, Benji, Grigsby, Claude C., Naik, Rajesh R., Kim, Steve S.

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β-Gallium oxide power electronics von Green, Andrew J., Speck, James, Xing, Grace, Moens, Peter, Allerstam, Fredrik, Gumaelius, Krister, Neyer, Thomas, Arias-Purdue, Andrea, Mehrotra, Vivek, Kuramata, Akito, Sasaki, Kohei, Watanabe, Shinya, Koshi, Kimiyoshi, Blevins, John, Bierwagen, Oliver, Krishnamoorthy, Sriram, Leedy, Kevin, Arehart, Aaron R., Neal, Adam T., Mou, Shin, Ringel, Steven A., Kumar, Avinash, Sharma, Ankit, Ghosh, Krishnendu, Singisetti, Uttam, Li, Wenshen, Chabak, Kelson, Liddy, Kyle, Islam, Ahmad, Rajan, Siddharth, Graham, Samuel, Choi, Sukwon, Cheng, Zhe, Higashiwaki, Masataka

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Enhanced Conductivity, Adhesion, and Environmental Stability of Printed Graphene Inks with Nitrocellulose von Secor, Ethan B, Gao, Theodore Z, Islam, Ahmad E, Rao, Rahul, Wallace, Shay G, Zhu, Jian, Putz, Karl W, Maruyama, Benji, Hersam, Mark C

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A Raman spectroscopy signature for characterizing defective single-layer graphene: Defect-induced I(D)/I(D′) intensity ratio by theoretical analysis von Jiang, Jie, Pachter, Ruth, Mehmood, Faisal, Islam, Ahmad E., Maruyama, Benji, Boeckl, John J.

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Spectroscopic evaluation of charge-transfer doping and strain in graphene/MoS2 heterostructures von Rao, Rahul, Islam, Ahmad E, Singh, Simranjeet, Berry, Rajiv, Kawakami, Roland K, Maruyama, Benji, Katoch, Jyoti

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Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes von Hendricks, Nolan S., Islam, Ahmad E., Sowers, Elizabeth A., Williams, Jeremiah, Dryden, Daniel M., Liddy, Kyle J., Wang, Weisong, Speck, James S., Green, Andrew J.

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Effect of fabrication parameters on the ferroelectricity of hafnium zirconium oxide films: A statistical study von Salcedo, Guillermo A., Islam, Ahmad E., Reichley, Elizabeth, Dietz, Michael, Schubert-Kabban, Christine M., Leedy, Kevin D., Back, Tyson C., Wang, Weisong, Green, Andrew, Wolfe, Timothy, Sattler, James M.

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Theoretical Power Figure-of-Merit in β -Ga2O3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation von Ahmed, Shaikh S., Islam, Ahmad E., Dryden, Daniel M., Liddy, Kyle J., Hendricks, Nolan S., Moser, Neil A., Chabak, Kelson D., Green, Andrew J.

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Usability of Telemedicine in Physical Therapy Rehabilitation: Systematic review von Mahmoud, Sr, Islam Ahmad Muhammad

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Dynamics of cleaning, passivating and doping monolayer MoS2 by controlled laser irradiation von Rao, Rahul, Carozo, Victor, Wang, Yuanxi, Islam, Ahmad E, Perea-Lopez, Nestor, Fujisawa, Kazunori, Crespi, Vincent H, Terrones, Mauricio, Maruyama, Benji

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Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit von Dryden, Daniel M., Liddy, Kyle J., Islam, Ahmad E., Williams, Jeremiah C., Walker, Dennis E., Hendricks, Nolan S., Moser, Neil A., Arias-Purdue, Andrea, Sepelak, Nicholas P., DeLello, Kursti, Chabak, Kelson D., Green, Andrew J.

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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length von Islam, Ahmad E., Sepelak, Nicholas P., Miesle, Adam T., Lee, Hanwool, Snure, Michael, Nikodemski, Stefan, Walker, Dennis E., Miller, Nicholas C., Grupen, Matt, Leedy, Kevin D., Liddy, Kyle J., Crespo, Antonio, Hughes, Gary R., Zhu, Wenjuan, Poling, Brian, Tetlak, Stephen, Chabak, Kelson D., Green, Andrew J.

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Temperature-induced degradation of GaN HEMT: An in situ heating study von Rasel, Md Abu Jafar, Zhang, Di, Chen, Aiping, Thomas, Melonie, House, Stephen D., Kuo, Winson, Watt, John, Islam, Ahmad, Glavin, Nicholas, Smyth, M., Haque, Aman, Wolfe, Douglas E., Pearton, Stephen J.

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Using nanoscale thermocapillary flows to create arrays of purely semiconducting single-walled carbon nanotubes von Jin, Sung Hun, Dunham, Simon N., Song, Jizhou, Xie, Xu, Kim, Ji-hun, Lu, Chaofeng, Islam, Ahmad, Du, Frank, Kim, Jaeseong, Felts, Johnny, Li, Yuhang, Xiong, Feng, Wahab, Muhammad A., Menon, Monisha, Cho, Eugene, Grosse, Kyle L., Lee, Dong Joon, Chung, Ha Uk, Pop, Eric, Alam, Muhammad A., King, William P., Huang, Yonggang, Rogers, John A.

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Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport von Miller, Nicholas C., Grupen, Matt, Islam, Ahmad E., Albrecht, John D., Frey, Dave, Young, Richard, Lindquist, Miles, Green, Andrew J., Walker, Dennis E., Chabak, Kelson D.

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