Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility Transistors von Harrysson Rodrigues, Isabel, Vorobiev, Andrei

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Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors von Harrysson Rodrigues, Isabel, Rorsman, Niklas, Vorobiev, Andrei

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Gan Photonic Crystals: Spectral Dynamics in UV, X‐Ray, and Alpha Radiation von Yasar, Firat, Kawaguchi, Noriaki, Yanagida, Takayuki, Harrysson Rodrigues, Isabel, Ceballos, Yleana Evelyn, Prado‐Rivera, Roberto, Keo, Sam

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On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field von Rodrigues, Isabel Harrysson, Niepce, David, Pourkabirian, Arsalan, Moschetti, Giuseppe, Schleeh, Joel, Bauch, Thilo, Grahn, Jan

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Geometrical magnetoresistance effect and mobility in graphene field-effect transistors (Sep, 10.1063/5.0123667, 2022) von Harrysson Rodrigues, Isabel, Hoque, Anamul Md, Vorobiev, Andrei

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Geometrical magnetoresistance effect and mobility in graphene field-effect transistors von Harrysson Rodrigues, Isabel, Generalov, Andrey, Md Hoque, Anamul, Soikkeli, Miika, Murros, Anton, Arpiainen, Sanna, Vorobiev, Andrei

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Charge carrier transport in graphene field-effect transistor scaled down to submicron gate lengths von Harrysson Rodrigues, Isabel, Vorobiev, Andrei

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Publisher's Note: “Geometrical magnetoresistance effect and mobility in graphene field-effect transistors” [Appl. Phys. Lett. 121, 013502 (2022)] von Rodrigues, Isabel Harrysson, Generalov, Andrey, Hoque, Anamul Md, Soikkeli, Miika, Murros, Anton, Arpiainen, Sanna, Vorobiev, Andrei

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Geometrical magnetoresistance effect and mobility in graphene field-effect transistors von Isabel Harrysson Rodrigues, Generalov, Andrey, Anamul Md Hoque, Soikkeli, Miika, Murros, Anton, Arpiainen, Sanna, Vorobiev, Andrei

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Charge carrier transport in field-effect transistors with two-dimensional electron gas channels studied using geometrical magnetoresistance effect von Harrysson Rodrigues, Isabel

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Origin and evolution of surface spin current in topological insulators von Dankert, André, Bhaskar, Priyamvada, Khokhriakov, Dmitrii, Rodrigues, Isabel H., Karpiak, Bogdan, Kamalakar, M. Venkata, Charpentier, Sophie, Garate, Ion, Dash, Saroj P.

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On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field von Isabel Harrysson Rodrigues, Niepce, David, Pourkabirian, Arsalan, Moschetti, Giuseppe, Schleeh, Joel, Bauch, Thilo, Grahn, Jan

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Cryogenic InP High Electron Mobility Transistors in a Magnetic Field von Harrysson Rodrigues, Isabel

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Evidence of quasi-ballistic transport limiting fT in graphene field-effect transistors von Harrysson Rodrigues, Isabel, Vorobiev, Andrei

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Evaluation and Study of Mobility in GFETs by geometrical magnetoresistance von Harrysson Rodrigues, Isabel, Vorobiev, Andrei, Stake, Jan

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Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field von Harrysson Rodrigues, Isabel, Niepce, David, Moschetti, Giuseppe, Pourkabirian, Arsalan, Schleeh, Joel, Bauch, Thilo, Grahn, Jan

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Strong Geometrical Magnetoresistance and Angular Dependence in InP HEMTs for cryogenic LNAs von Harrysson Rodrigues, Isabel, Niepce, David, Pourkabirian, Arsalan, Moschetti, Giuseppe, Schleeh, Joel, Bauch, Thilo, Grahn, Jan

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Magnetic Influence on Cryogenic InP HEMT DC Characteristics von Harrysson Rodrigues, Isabel, Pourkabirian, Arsalan, Moschetti, Giuseppe, Schleeh, Joel, Nilsson, Per-Åke, Grahn, Jan

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Magnetic Influence on CryogenicInP HEMT LNAs von Harrysson Rodrigues, Isabel, Pourkabirian, Arsalan, Moschetti, Giuseppe, Schleeh, Joel, Nilsson, Per-Åke, Niepce, David, Bauch, Thilo, Lombardi, Floriana, Grahn, Jan

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