Self-biased reconfigurable graphene stacks for terahertz plasmonics von Gomez-Diaz, J.S., Moldovan, C, Capdevila, S, Romeu, J, Bernard, L.S., Magrez, A, Ionescu, A.M., Perruisseau-Carrier, J

Volltext

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1−xZrxO2-based structures von Stolichnov, I., Cavalieri, M., Gastaldi, C., Hoffmann, M., Schroeder, U., Mikolajick, T., Ionescu, A. M.

Volltext

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor von Vitale, Wolfgang A., Casu, Emanuele A., Biswas, Arnab, Rosca, Teodor, Alper, Cem, Krammer, Anna, Luong, Gia V., Zhao, Qing-T., Mantl, Siegfried, Schüler, Andreas, Ionescu, A. M.

Volltext

Pinning potential in highly performant CaKFe4As4 superconductor from DC magnetic relaxation and AC multi-frequency susceptibility studies von Ionescu, A. M., Ivan, I., Crisan, D. N., Galluzzi, A., Polichetti, M., Ishida, S., Iyo, A., Eisaki, H., Crisan, A.

Volltext

Bound and stable vortex-antivortex pairs in high-T-c superconductors von Simmendinger, J., Bihler, M., Ionescu, A. M., Weigand, M., Schuetz, G., Albrecht, J.

Volltext

On the pinning force in high density MgB2 samples von Sandu, V., Ionescu, A. M., Aldica, G., Grigoroscuta, M. A., Burdusel, M., Badica, P.

Volltext

Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor von Padilla, J. L., Alper, C., Gámiz, F., Ionescu, A. M.

Volltext

Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement von Padilla, J. L., Alper, C., Godoy, A., Gamiz, F., Ionescu, A. M.

Volltext

Inter‐rater and intrarater agreement and reliability in clinical staging of hidradenitis suppurativa/acne inversa von Zouboulis, C.C., Matusiak, Ł., Jemec, G.B.E., Szepietowski, J.C., Álvarez‐Chinchilla, P.J., Asoskova, A., Bonnekoh, H., Brattoli, G., Cetinarslan, T.S., Dawicka, J., Dente, V., Gallyamova, Y., Giovanardi, G., Glasenhardt, K., Ionescu, A.‐M., Janushaj, E., Lakhssassi, M.K., Lőrincz, K.K., Ludew, D., Makmatov‐Rys, M., Malickova, M., Mengesha, S.W., Mintoff, D., Otlewska, A., Papakou, M., Pirvan, A.M., Provvidenziale, L., Quadrana, F., Savickaja, N., Tamulyté, G., Trifu, A., Vīgante, A., Włodarek, K., Zouboulis, V.A.

Volltext

Magnetically induced anisotropy of flux penetration into strong-pinning superconductor/ferromagnet bilayers von Simmendinger, J, Hänisch, J, Bihler, M, Ionescu, A M, Weigand, M, Sieger, M, Hühne, R, Rijckaert, H, van Driessche, I, Schütz, G, Albrecht, J

Volltext

Aleksey I. Pospelov, founder of the Dermatology School of Moscow von Olisova, O.Y., Teplyuk, N.P., Snarskaya, E.S., Ionescu, M.-A.

Volltext

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance von Alper, C., De Michielis, L., Dağtekin, N., Lattanzio, L., Bouvet, D., Ionescu, A.M.

Volltext

III-V heterostructure tunnel field-effect transistor von Convertino, C, Zota, C B, Schmid, H, Ionescu, A M, Moselund, K E

Volltext

Synergetic pinning centres in BaZrO3-doped YBa2Cu3O7-x films induced by SrTiO3 nano-layers von Crisan, A, Dang, V S, Mikheenko, P, Ionescu, A M, Ivan, I, Miu, L

Volltext

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives von Durand, C., Casset, F., Renaux, P., Abele, N., Legrand, B., Renaud, D., Ollier, E., Ancey, P., Ionescu, A.M., Buchaillot, L.

Volltext

Technological development of high-k dielectric FinFETs for liquid environment von Rigante, S., Scarbolo, P., Bouvet, D., Wipf, M., Bedner, K., Ionescu, A.M.

Volltext

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse von Gastaldi, C., Kamaei, S., Cavalieri, M., Saeidi, A., Stolichnov, I., Radu, I., Ionescu, A. M.

Volltext

Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation von Capua, Luca, Sprunger, Yann, Elettro, H., Risch, F., Grammoustianou, A., Midahuen, R., Ernst, T., Barraud, S., Gill, R., Ionescu, A. M.

Volltext

RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate von Fernández-Bolaños, M., Perruisseau-Carrier, J., Dainesi, P., Ionescu, A.M.

Volltext

High aspect ratio sub-micron trenches on silicon-on-insulator and bulk silicon von Hermersdorf, M., Hibert, C., Grogg, D., Ionescu, A.M.

Volltext