Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices von Lübben, Michael, Karakolis, Panagiotis, Ioannou-Sougleridis, Vassilios, Normand, Pascal, Dimitrakis, Panagiotis, Valov, Ilia

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Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaO x Based Memristive Devices von Lübben, Michael, Karakolis, Panagiotis, Ioannou‐Sougleridis, Vassilios, Normand, Pascal, Dimitrakis, Panagiotis, Valov, Ilia

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Diffusion of implanted nitrogen in germanium von Skarlatos, Dimitrios, Barozzi, Mario, Bersani, Massimo, Vouroutzis, Nikos Z., Ioannou-Sougleridis, Vassilios

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Multi-level resistance switching and random telegraph noise analysis of nitride based memristors von Vasileiadis, Nikolaos, Loukas, Panagiotis, Karakolis, Panagiotis, Ioannou-Sougleridis, Vassilios, Normand, Pascal, Ntinas, Vasileios, Fyrigos, Iosif-Angelos, Karafyllidis, Ioannis, Sirakoulis, Georgios Ch, Dimitrakis, Panagiotis

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(Invited) Issues with n-type Dopants in Germanium von Skarlatos, Dimitrios, Ioannou-Sougleridis, Vassilios, Barozzi, Mario, Pepponi, Giancarlo, Vouroutzis, Nikolaos Zisis, Velessiotis, Dimitrios, Stoemenos, John, Zographos, Nikolas, Colombeau, Benjamin P

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Understanding the Role of Defects in Silicon Nitride-Based Resistive Switching Memories Through Oxygen Doping von Vasileiadis, Nikolaos, Karakolis, Panagiotis, Mandylas, Panagiotis, Ioannou-Sougleridis, Vassilios, Normand, Pascal, Perego, Michele, Komninou, Philomela, Ntinas, Vasileios, Fyrigos, Iosif-Angelos, Karafyllidis, Ioannis, Sirakoulis, Georgios Ch, Dimitrakis, Panagiotis

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Degradation of Pt-Al2O3-Ge Metal Oxide Semiconductor Structures due to Pt-Al2O3 Induced Reactions von Ioannou-Sougleridis, Vassilios, Alafakis, Stamatios, Vouroutzis, Nikolaos Z., Mergia, Konstantina, Speliotis, Athanassios, Skarlatos, Dimitrios

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Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaO sub(x) Based Memristive Devices von Luebben, Michael, Karakolis, Panagiotis, Ioannou-Sougleridis, Vassilios, Normand, Pascal, Dimitrakis, Panagiotis, Valov, Ilia

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Degradation of Pt-Al 2 O 3 -Ge Metal Oxide Semiconductor Structures due to Pt-Al 2 O 3 Induced Reactions von Ioannou-Sougleridis, Vassilios, Alafakis, Stamatios, Vouroutzis, Nikolaos Z., Mergia, Konstantina, Speliotis, Athanassios, Skarlatos, Dimitrios

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Inert ambient annealing effect on MANOS capacitor memory characteristics von Nikolaou, Nikolaos, Dimitrakis, Panagiotis, Normand, Pascal, Skarlatos, Dimitrios, Giannakopoulos, Konstantinos, Mergia, Konstantina, Ioannou-Sougleridis, Vassilios, Kukli, Kaupo, Niinistö, Jaakko, Mizohata, Kenichiro, Ritala, Mikko, Leskelä, Markku

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MANOS performance dependence on ALD Al2O3 oxidation source von Nikolaou, Nikolaos, Dimitrakis, Panagiotis, Normand, Pascal, Speliotis, Thanassis, Kukli, Kaupo, Niinistö, Jaakko, Mizohata, Kenichiro, Ritala, Mikko, Leskelä, Markku, Ioannou-Sougleridis, Vassilios

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The effect of oxygen source on atomic layer deposited Al2O3 as blocking oxide in metal/aluminum oxide/nitride/oxide/silicon memory capacitors von Nikolaou, Nikolaos, Ioannou-Sougleridis, Vassilios, Dimitrakis, Panagiotis, Normand, Pascal, Skarlatos, Dimitrios, Giannakopoulos, Konstantinos, Kukli, Kaupo, Niinistö, Jaakko, Ritala, Mikko, Leskelä, Markku

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Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation von Ioannou-Sougleridis, Vassilios, Poulakis, Nikolaos, Dimitrakis, Panagiotis, Normand, Pascal, Patsis, George P., Dimoulas, Athanasios, Simoen, Eddy

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Influence of atomic layer deposition chemistry on high- k dielectrics for charge trapping memories von Nikolaou, Nikolaos, Dimitrakis, Panagiotis, Normand, Pascal, Ioannou-Sougleridis, Vassilios, Giannakopoulos, Konstantinos, Mergia, Konstantina, Kukli, Kaupo, Niinistö, Jaakko, Ritala, Mikko, Leskelä, Markku

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Influence of HfO2 Control Oxide ALD Precursor Chemistry for Nitride Memories von Mergia, Konstantina, Niinisto, Jaakko, Giannakopoulos, Konstantinos, Ioannou-Sougleridis, Vassilios, Ritala, Mikko, Nikolaou, Nikolaos, Kukli, Kaupo, Dimitrakis, Panagiotis, Leskela, Markku, Normand, Pascal

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Multi-level resistance switching and random telegraph noise analysis of nitride based memristors von Vasileiadis, Nikolaos, Loukas, Panagiotis, Karakolis, Panagiotis, Ioannou-Sougleridis, Vassilios, Normand, Pascal, Ntinas, Vasileios, Iosif-Angelos Fyrigos, Karafyllidis, Ioannis, Sirakoulis, Georgios Ch, Dimitrakis, Panagiotis

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Resistance Switching Properties of Silicon Nitride Material with Heavily Doped Si As Bottom Electrode von Karakolis, Panagiotis, Speliotis, Athanasios, Ioannou-Sougleridis, Vassilios, Normand, Pascal, Skarlatos, Dimitrios, Dimitrakis, Panagiotis

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(Invited) Issues with n-type Dopants in Germanium von Skarlatos, Dimitrios, Ioannou-Sougleridis, Vassilios, Barozzi, Mario, Pepponi, Giancarlo, Vouroutzis, Nikolaos Zisis, Velessiotis, Dimitrios, Stoemenos, John, Zographos, Nikolas, Colombeau, Benjamin P

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