Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs von Marso, M., Heidelberger, G., Indlekofer, K.M., Bernat, J., Fox, A., Kordos, P., Luth, H.

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Understanding Coulomb Effects in Nanoscale Schottky-Barrier-FETs von Indlekofer, K.M., Knoch, J., Appenzeller, J.

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A vertical resonant tunneling transistor for application in digital logic circuits von Stock, J., Malindretos, J., Indlekofer, K.M., Pottgens, M., Forster, A., Luth, H.

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Quantum point contact due to Fermi-level pinning and doping profiles in semiconductor nanocolumns von Indlekofer, K.M., Goryll, M., Wensorra, J., Lepsa, M.I.

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Effect of confinement on the weak antilocalization in InGaAs/InP quasi-1D structures von Guzenko, V.A., Schäpers, Th, Indlekofer, K.M., Knobbe, J.

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Modelling of Polarization Charge-Induced Asymmetry of I-V Characteristics of AlN/GaN-Based Resonant Tunnelling Structures von Indlekofer, K.M., Donà, E., Malindretos, J., Bertelli, M., Kočan, M., Rizzi, A., Lüth, H.

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THz probe for nanowire FETs: simulation of few-electron fingerprints von Indlekofer, K.M., Nemeth, R., Knoch, J.

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Density-matrix description of a quantum dot system with variable lateral confinement in the single-electron tunneling regime von Indlekofer, K.M., Förster, A., Lüth, H.

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A model for interaction corrections to transport through open quantum dots von Indlekofer, K.M, Bird, J.P, Akis, R, Ferry, D.K, Goodnick, S.M

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Can Kondo-like behavior occur in open quantum dots? von Bird, J.P, Shailos, A, Elhassan, M, Prasad, C, Indlekofer, K.M, Shifren, L, Akis, R, Ferry, D.K, Lin, L.-H, Aoki, N, Ochiai, Y, Ishibashi, K, Aoyagi, Y

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Resonant tunnelling effect in delta doped p-n GaAs junction von Vitusevich, S.A., Förster, A., Belyaev, A.E., Indlekofer, K.M., Lüth, H., Konakova, R.V.

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