Accounting Quality, Auditing, and Corporate Governance von Imhoff, Jr., Eugene A

Volltext

High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices von Imhoff, E. A., Kub, F. J., Hobart, K. D., Ancona, M. G., VanMil, B. L., Gaskill, D. K., Lew, K., Myers-Ward, R. L., Eddy, Charles R.

Volltext

Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices von Kub, Fritz J., Tadjer, Marko J., Hobart, Karl D., Imhoff, Eugene A.

Volltext

Towards a polariton-based light emitter based on non-polar GaN quantum wells von Mastro, Michael A., Imhoff, Eugene A., Freitas, Jaime A., Hite, Jennifer K., Eddy, Charles R.

Volltext

Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers von Mahadik, Nadeemullah A., Stahlbush, Robert E., Ancona, M. G., Imhoff, Eugene A., Hobart, Karl D., Myers-Ward, Rachael L., Eddy, Charles R., Kurt Gaskill, D., Kub, Fritz J.

Volltext

Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments von Luna, Lunet E, Tadjer, Marko J, Anderson, Travis J, Imhoff, Eugene A, Hobart, Karl D, Kub, Fritz J

Volltext

Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current von Tadjer, Marko J., Stahlbush, Robert E., Hobart, Karl D., McMarr, Patrick J., Hughes, Hap L., Imhoff, Eugene A., Kub, Fritz J., Haney, Sarah K., Agarwal, Anant

Volltext

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers von Hull, B.A., Sumakeris, J.J., O'Loughlin, M.J., Qingchun Zhang, Richmond, J., Powell, A.R., Imhoff, E.A., Hobart, K.D., Rivera-Lopez, A., Hefner, A.R.

Volltext

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing von Mahadik, Nadeemullah A., Tadjer, M.J., Affouda, C.A., Stahlbush, Robert E., Imhoff, Eugene A., Ruland, G.E.

Volltext

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing von Tadjer, Marko J., Freitas, Jaime A., Mahadik, Nadeemullah A., Greenlee, Jordan D., Stahlbush, Robert E., Kub, Fritz J., Klein, Paul B., Imhoff, Eugene A., Feigelson, Boris N.

Volltext

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers von Feygelson, Boris N., Imhoff, Eugene A., Tadjer, Marko J., Nath, Anindya, Stahlbush, Robert E., Nipoti, Roberta, Mahadik, Nadeemullah A.

Volltext

Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension von Kirby, C., Veliadis, Victor, Nechay, B., White, J., Woodruff, S., Lavoie, C., Imhoff, Eugene A., Hearne, H., Snook, M., Davis, Stuart M.

Volltext

High-Current 10 kV SiC JBS Rectifier Performance von Hobart, Karl D., Imhoff, Eugene A.

Volltext

The Effects of Recognition versus Disclosure on Shareholder Risk and Executive Compensation von Imhoff, Eugene A., Lipe, Robert, Wright, David W.

Volltext

The relation between perceived accounting quality and economic characteristics of the firm von Imhoff, Eugene A.

Volltext

The Effect of Ex Ante Earnings Uncertainty on Earnings Response Coefficients von Imhoff, Eugene A., Lobo, Gerald J.

Volltext

Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices von Mastro, Michael E., Kub, Fritz J., Eddy, Charles R., Hobart, Karl D., Anderson, Travis J., Tadjer, Marko J., Hite, Jennifer K., Imhoff, Eugene A.

Volltext

Deep reactive ion etching of 4H-SiC via cyclic SF 6 /O 2 segments von Luna, Lunet E, Tadjer, Marko J, Anderson, Travis J, Imhoff, Eugene A, Hobart, Karl D, Kub, Fritz J

Volltext

Announcement of Editorial Transition von Imhoff, Eugene A.

Volltext

Dry Etching of High Aspect Ratio 4H-SiC Microstructures von Luna, Lunet E., Tadjer, Marko J., Anderson, Travis J., Imhoff, Eugene A., Hobart, Karl D., Kub, Fritz J.

Volltext