First-principles modeling of GaN(0001)/water interface: Effect of surface charging von Sato, Masahiro, Imazeki, Yuki, Fujii, Katsushi, Nakano, Yoshiaki, Sugiyama, Masakazu

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Comparative Study of H2O and O2 Adsorption on the GaN Surface von Sato, Masahiro, Imazeki, Yuki, Takeda, Takahito, Kobayashi, Masaki, Yamamoto, Susumu, Matsuda, Iwao, Yoshinobu, Jun, Nakano, Yoshiaki, Sugiyama, Masakazu

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In Situ Photoluminescence Analysis of GaN Photoanode during Water Oxidation von Minegishi, Tsutomu, Shizumi, Soraya, Ciftci, Oguz, Endo, Tatsuro, Imazeki, Yuki, Pihosh, Yuriy, Sugiyama, Masakazu

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Comparative Study of H 2 O and O 2 Adsorption on the GaN Surface von Sato, Masahiro, Imazeki, Yuki, Takeda, Takahito, Kobayashi, Masaki, Yamamoto, Susumu, Matsuda, Iwao, Yoshinobu, Jun, Nakano, Yoshiaki, Sugiyama, Masakazu

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Atomistic-Level Description of GaN/Water Interface by a Combined Spectroscopic and First-Principles Computational Approach von Sato, Masahiro, Imazeki, Yuki, Takeda, Takahito, Kobayashi, Masaki, Yamamoto, Susumu, Matsuda, Iwao, Yoshinobu, Jun, Nakano, Yoshiaki, Sugiyama, Masakazu

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Band Bending of n-GaN under Ambient H 2 O Vapor Studied by X-ray Photoelectron Spectroscopy von Imazeki, Yuki, Sato, Masahiro, Takeda, Takahito, Kobayashi, Masaki, Yamamoto, Susumu, Matsuda, Iwao, Yoshinobu, Jun, Sugiyama, Masakazu, Nakano, Yoshiaki

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Band Bending of n‑GaN under Ambient H2O Vapor Studied by X‑ray Photoelectron Spectroscopy von Imazeki, Yuki, Sato, Masahiro, Takeda, Takahito, Kobayashi, Masaki, Yamamoto, Susumu, Matsuda, Iwao, Yoshinobu, Jun, Sugiyama, Masakazu, Nakano, Yoshiaki

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In-situ photoluminescence of GaN photoelectrode during water splitting reaction von Minegishi, Tsutomu, Shizumi, Soraya, Ciftci, Ogus, Imazeki, Yuki, Sugiyama, Masakazu

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Photoelectrochemical properties of SrTiO3 (100) loaded with Pt von Shizumi, Soraya, Yuki, Imazeki, Masahiro, Sato, Katsushi, Fujii, Tsutomu, Minegishi, Yoshiaki, Nakano, Masakazu, Sugiyama

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Material-dependent Photoresponse of quasi-Fermi Level in Single-crystalline Photoanodes von Ngamprapawat, Supawan, Imazeki, Yuki, Minegishi, Tsutomu, Fujii, Katsushi, Sugiyama, Masakazu

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Impact of Dissolved Oxygen on Band Alignment at n-GaN Photoelectrode/Electrolyte Interface von Imazeki, Yuki, Ngamprapawat, Supawan, Sato, Masahiro, Fujii, Katsushi, Minegishi, Tsutomu, Sugiyama, Masakazu, Nakano, Yoshiaki

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Orientation Dependence on SrTiO3 in Photoelectrochemical Water Splitting von Shizumi, Soraya, Imazeki, Yuki, Ngamprapawat, Supawan, Sato, Masahiro, Fujii, Katsushi, Minegishi, Tsutomu, Nakano, Yoshiaki, Sugiyama, Masakazu

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Effect of surface charging on the structure of GaN(0001)/water interface von Sato, Masahiro, Imazeki, Yuki, Fujii, Katsushi, Nakano, Yoshiaki, Sugiyama, Masakazu

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Analysis of Semiconductor/Electrolyte Interface by Photo-Induced Open-Circuit-Potential Method von Imazeki, Yuki, Sato, Masahiro, Fujii, Katsushi, Sugiyama, Masakazu, Nakano, Yoshiaki

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Pt担持したSrTiO3(100)面の光電気化学特性 von 沈, 昊哉, 今関, 裕貴, 佐藤, 正寛, 藤井, 克司, 嶺岸, 耕, 中野, 義昭, 杉山, 正和

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GaN薄膜光電極の水分解反応中その場フォトルミネッセンス von 嶺岸, 耕, 沈, 昊哉, Oguz, Ciftci, 今関, 裕貴, 杉山, 正和

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光電気化学的水分解におけるSrTiO3の面方位依存性 von 沈, 昊哉, 今関, 裕貴, スパワン, ナーンプラパーワット, 佐藤, 正寛, 藤井, 克司, 嶺岸, 耕, 中野, 義昭, 杉山, 正和

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n-GaN光電極/電解液界面バンドアライメントに及ぼす溶存酸素の影響 von 今関, 裕貴, ナーンプラパーワット, スパワン, 佐藤, 正寛, 藤井, 克司, 嶺岸, 耕, 杉山, 正和, 中野, 義昭

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光誘起OCP法による半導体・電解液界面バンドアライメントの解析 von 今関, 裕貴, 佐藤, 正寛, 藤井, 克司, 杉山, 正和, 中野, 義昭

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GaN(0001)/水界面の構造への表面帯電の影響 von 佐藤, 正寛, 今関, 裕貴, 藤井, 克司, 中野, 義昭, 杉山, 正和

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