Photoinduced Homolysis of Alkyl-Cobalt(III) Bonds in a Cyclodextrin Cage von Imabeppu, Kohei, Kuwano, Hiroyuki, Yutani, Eriko, Kitagishi, Hiroaki, Kano, Koji

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ANTICORROSIVE COATING COMPOSITION, COATED FILM FORMED FROM THE COMPOSITION, LAMINATE AND STRUCTURE HAVING THE COATED FILM, AND ADDITIVE AGENT FOR ANTICORROSIVE COATING von WADA KOKI, IMABEPPU KOHEI, KAMATA YUKA, OSHIBA MASAKI

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TWO-LIQUID AQUEOUS UNDERCOATING COMPOSITION, COATED BODY, AND METHOD FOR PRODUCING THE SAME von ICHIMURA MICHIHARU, IMABEPPU KOHEI, TOKIWA YUTO, KAMATA YUKA

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Electrical properties of Si-doped GaN prepared using pulsed sputtering von Arakawa, Yasuaki, Ueno, Kohei, Imabeppu, Hideyuki, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi

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Fabrication of GaN pn-junction diodes by pulsed sputtering von Imabeppu, Hideyuki, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

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Development of n-type doping technique for GaN by pulsed sputtering von Ueno, Kohei, Arakawa, Yasuaki, Imabeppu, Hideyuki, Kobayashi, Atsushi, Otha, Jitsuo, Fujioka, Hiroshi

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Selective epitaxial growth of doped GaN by pulsed sputtering von Ueno, Kohei, Imabeppu, Hideyuki, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi

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Fabrication of n-type GaN Schottky diodes by pulsed sputtering von Imabeppu, Hideyuki, Ueno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi

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パルススパッタ堆積法によるGaN pn接合ダイオードの作製 von 今別府, 秀行, 上野, 耕平, 小林, 篤, 藤岡, 洋

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PSD法によるn型GaNショットキーダイオードの作製 von 今別府, 秀行, 上野, 耕平, 小林, 篤, 太田, 実雄, 藤岡, 洋

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不純物添加GaNの位置選択エピ成長技術の開発 von 上野, 耕平, 今別府, 秀行, 小林, 篤, 太田, 実雄, 藤岡, 洋

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PSD法によるGaNへのn型ドーピング技術の開発 von 上野, 耕平, 荒川, 靖章, 今別府, 秀行, 小林, 篤, 太田, 実雄, 藤岡, 洋

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