Synchrotron Radiation Photoemission Study of the Electronic Structure of the Ultrathin K/AIN Interface von Benemanskaya, G. V., Timoshnev, S. N., Iluridze, G. N., Minashvili, T. A.

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Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/n-GaN and Ba/n-AlGaN interfaces von Benemanskaya, G. V., Timoshnev, S. N., Ivanov, S. V., Frank-Kamenetskaya, G. E., Marchenko, D. E., Iluridze, G. N.

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Optical and photoelectric properties of pure and cadmium-and lead-doped neodymium sesquisulfide thin films von Dzhabua, Z. U., Dadiani, T. O., Gigineishvili, A. V., Stamateli, M. Yu, Davitadze, K. D., Iluridze, G. N.

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Nitride and Sulfide Chemisorbed Layers as the Surface Passivants for A3B5 Semiconductors von Berkovits, V. L., Gordeeva, A. B., L’vova, T. V., Ulin, V. P., Iluridze, G. N., Minashvili, T. A., Kervalishvili, Paata J., Gigineishvili, A. V.

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SEALING ELEMENT MAINLY FOR REDUCTION ROASTING FURNACE IN PRODUCTION OF ELECTROLYTIC MAGNETIC DIOXIDE von PRONIN VADIM B,SU, CHERNYAVETS ANATOLIJ N,SU, TROFIMOVA ELENA G,SU, SURKOV SERGEJ A,SU, KARDANAKHISHVILI TAMAZ S,SU, ZARECHENSKIJ EVGENIJ T,SU, ILURIDZE DZHEMSHER G,SU, CHERNYKH VADIM A,SU

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SEALING MEMBER von PRONIN VADIM B,SU, CHERNYAVETS ANATOLIJ N,SU, TROFIMOVA ELENA G,SU, SURKOV SERGEJ A,SU, KHAZOV ANATOLIJ A,SU, KARDANAKHISHVILI TAMAZ S,SU, NOVAK LYUDVIG V,SU, ZARECHENSKIJ EVGENIJ T,SU, ILURIDZE DZHEMSHER G,SU, CHERNYKH VADIM A,SU

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