-
1
-
2
-
3
-
4
-
5
-
6
Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p -metal oxide semiconductor field effect transistors using millisecond annealing
Veröffentlicht in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
VolltextArtikel -
7
-
8
Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
Veröffentlicht in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
VolltextArtikel -
9
Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide se...
Veröffentlicht in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
VolltextArtikel -
10
-
11
-
12
-
13
-
14
-
15
-
16
-
17
-
18
-
19
-
20