Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors von Illarionov, Yury Yuryevich, Waltl, Michael, Rzepa, Gerhard, Kim, Joon-Seok, Kim, Seohee, Dodabalapur, Ananth, Akinwande, Deji, Grasser, Tibor

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Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors von Stampfer, Bernhard, Zhang, Feng, Illarionov, Yury Yuryevich, Knobloch, Theresia, Wu, Peng, Waltl, Michael, Grill, Alexander, Appenzeller, Joerg, Grasser, Tibor

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Characterization of Single Defects in Ultrascaled MoS 2 Field-Effect Transistors von Stampfer, Bernhard, Zhang, Feng, Illarionov, Yury Yuryevich, Knobloch, Theresia, Wu, Peng, Waltl, Michael, Grill, Alexander, Appenzeller, Joerg, Grasser, Tibor

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(Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS 2 Transistors von Knobloch, Theresia, Rzepa, Gerhard, Illarionov, Yury Yuryevich, Waltl, Michael, Polyushkin, Dmitry, Pospischil, Andreas, Furchi, Marco, Mueller, Thomas, Grasser, Tibor

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(Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors von Knobloch, Theresia, Rzepa, Gerhard, Illarionov, Yury Yuryevich, Waltl, Michael, Polyushkin, Dmitry, Pospischil, Andreas, Furchi, Marco, Mueller, Thomas, Grasser, Tibor

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(Invited) Where Are the Best Insulators for 2D Field-Effect Transistors? von Illarionov, Yury Yuryevich, Knobloch, Theresia, Grasser, Tibor

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(Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS 2 Transistors von Knobloch, Theresia, Rzepa, Gerhard, Illarionov, Yury Yuryevich, Waltl, Michael, Polyushkin, Dmitry, Pospischil, Andreas, Furchi, Marco, Mueller, Thomas, Grasser, Tibor

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