Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy von Ilkiv, I. V., Kotlyar, K. P., Kirilenko, D. A., Osipov, A. V., Soshnikov, I. P., Terpitsky, A. N., Cirlin, G. E.

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Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy von Goray, L. I., Pirogov, E. V., Sobolev, M. S., Ilkiv, I. V., Dashkov, A. S., Vainer, Yu. A., Svechnikov, M. V., Yunin, P. A., Chkhalo, N. I., Bouravlev, A. D.

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Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon von Cirlin, G. E., Reznik, R. R., Samsonenko, Yu. B., Khrebtov, A. I., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Kirilenko, D. A., Kryzhanovskaya, N. V.

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MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer von Reznik, R. R., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Lebedev, S. P., Lebedev, A. A., Kirilenko, D. A., Alexeev, P. A., Cirlin, G. E.

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MBE Growth and Optical Properties of GaN, InN, and A3 B5 Nanowires on SiC/Si(111) Hybrid Substrate von Cirlin, G. E., Nikitina, E. V., Kukushkin, S. A., Soshnikov, I. P., Khrebtov, A. I., Ilkiv, I. V., Kotlyar, K. P., Reznik, R. R., Osipov, A. V.

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Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them von Ilkiv, I. V., Lendyashova, V. V., Borodin, B. B., Talalaev, V. G., Shugabaev, T., Reznik, R. R., Cirlin, G. E.

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Features of InP on Si Nanowire Growth von Karlina, L. B., Vlasov, A. S., Ilkiv, I. V., Vershinin, A. V., Soshnikov, I. P.

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Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices von Lendyashova, V. V., Ilkiv, I. V., Borodin, B. R., Kirilenko, D. A., Dragunova, A. S., Shugabaev, T., Cirlin, G. E.

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MBE growth of AlGaAs/Ge/AlGaAs core-shell nanowire von Terpitskiy, A N, Ilkiv, I V, Kotlyar, K P, Kirilenko, D A, Cirlin, G E

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Fabrication and optical properties of Au:SiO2 nanostructured thin films von Ilkiv, I V, Morozov, K M, Kotlyar, K P, Amelchuk, D., Bouravleuv, A D

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Preparation of Si substrates for monolithic integration of III−V quantum dots by selective MBE growth von Fominykh, N A, Sobolev, M S, Ilkiv, I V, Mokhov, D V, Berezovskaya, T N, Bouravleuv, A D

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III-V nanowires with quantum dots: MBE growth and properties von Reznik, R R, Kotlyar, K P, Gridchin, V O, Ilkiv, I V, Khrebtov, A I, Samsonenko, Yu B, Soshnikov, I P, Kryzhanovskaya, N V, Leandro, L, Akopian, N, Cirlin, G E

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Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures von Goray, L. I., Pirogov, E. V., Nikitina, E. V., Ubyivovk, E. V., Gerchikov, L. G., Ipatov, A. N., Dashkov, A. S., Sobolev, M. S., Ilkiv, I. V., Bouravlev, A. D.

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Surface state density in wurtzite InP nanowires von Sharov, V A, Alekseev, P A, Dunaevskiy, M S, Ilkiv, I V, Reznik, R R, Cirlin, G E

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Monolith GaAsP/Si dual-junction solar cells grown by MBE von Sobolev, M S, Ilkiv, I V, Lazarenko, A A, Mizerov, A M, Nikitina, E V, Pirogov, E V, Timoshnev, S N, Baranov, A I, Bouravleuv, A D

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MBE growth of GaAs and InAs nanowires using colloidal Ag nanoparticles von Ilkiv, I V, Reznik, R R, Kotlyar, K P, Bouravleuv, A D, Cirlin, G E

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MBE growth of GaAs nanowires with modulated crystal structure von Ilkiv, I V, Kotlyar, K P, Kirilenko, D A, Lebedev, S P, Lebedev, A A, Alekseev, P A, Bouravleuv, A D, Cirlin, G E

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Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates von Alekseev, P. A., Dunaevskiy, M. S., Mikhailov, A. O., Lebedev, S. P., Lebedev, A. A., Ilkiv, I. V., Khrebtov, A. I., Bouravleuv, A. D., Cirlin, G. E.

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MBE growth of nanowires using colloidal Ag nanoparticles von Bouravleuv, A D, Ilkiv, I V, Reznik, R R, Shtrom, I V, Khrebtov, A I, Samsonenko, Yu B, Soshnikov, I P, Cirlin, G E, Lipsanen, H

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The use of SiC Si(111) hybrid substrate for MBE growth of GaN nanowires von Reznik, R R, Kotlyar, K P, Ilkiv, I V, Soshnikov, I P, Kukushkin, S A, Osipov, A V, Nikitina, E V, Cirlin, G E

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