Treffer 1 - 6 von 6 für Suche 'Ilhyun Yun', Suchdauer: 0,65s Treffer weiter einschränken
  1. 1
    A 55dB SNR with 240Hz frame scan rate mutual capacitor 30×24 touch-screen panel read-out IC using code-division multiple sensing technique

    A 55dB SNR with 240Hz frame scan rate mutual capacitor 30×24 touch-screen panel read-out IC using code-division multiple sensing technique von Hyungcheol Shin, Seunghoon Ko, Hongjae Jang, Ilhyun Yun, Kwyro Lee


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  2. 2
    A 32-KB Standard CMOS Antifuse One-Time Programmable ROM Embedded in a 16-bit Microcontroller

    A 32-KB Standard CMOS Antifuse One-Time Programmable ROM Embedded in a 16-bit Microcontroller von Hyouk-Kyu Cha, Ilhyun Yun, Jinbong Kim, Byeong-Cheol So, Kanghyup Chun, Nam, I., Kwyro Lee


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  3. 3
    12.5 2D Coded-aperture-based ultra-compact capacitive touch-screen controller with 40 reconfigurable channels

    12.5 2D Coded-aperture-based ultra-compact capacitive touch-screen controller with 40 reconfigurable channels von Hongjae Jang, Hyungcheol Shin, Seunghoon Ko, Ilhyun Yun, Kwyro Lee


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  4. 4
    Low noise capacitive sensor for multi-touch mobile handset's applications

    Low noise capacitive sensor for multi-touch mobile handset's applications von Seunghoon Ko, Hyungcheol Shin, Jaemin Lee, Hongjae Jang, Byeong-Cheol So, Ilhyun Yun, Kwyro Lee

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  5. 5
    A 70dB SNR capacitive touch screen panel readout IC using capacitor-less trans-impedance amplifier and coded Orthogonal Frequency-Division Multiple Sensing scheme

    A 70dB SNR capacitive touch screen panel readout IC using capacitor-less trans-impedance amplifier and coded Orthogonal Frequency-Division Multiple Sensing scheme von Seunghoon Ko, Hyungcheol Shin, Hongjae Jang, Ilhyun Yun, Kwyro Lee


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  6. 6
    1/f Noise Characteristics of Sub-100 nm MOS Transistors

    1/f Noise Characteristics of Sub-100 nm MOS Transistors von Jeong-Hyun Lee, Sang-Yun Kim, Ilhyun Cho, Sungbo Hwang, Jong-Ho Lee


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