AlGaN/GaInN/GaN heterostructure field-effect transistor von Ikki, Hiromichi, Isobe, Yasuhiro, Iida, Daisuke, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi, Bandoh, Akira, Udagawa, Takashi

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Nonpolar $a$-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate von Isobe, Yasuhiro, Ikki, Hiromichi, Sakakibara, Tatsuyuki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Sugiyama, Takayuki, Amano, Hiroshi, Imade, Mamoru, Kitaoka, Yasuo, Mori, Yusuke

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MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate von Isobe, Yasuhiro, Ikki, Hiromichi, Sakakibara, Tatsuyuki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Sugiyama, Takayuki, Amano, Hiroshi, Imade, Mamoru, Mori, Yusuke

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Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors von Ikeda, Kazuya, Isobe, Yasuhiro, Ikki, Hiromichi, Sakakibara, Tatsuyuki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi

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