Infrared studies of transition layers at SiO2/Si interface von Ono, Haruhiko, Ikarashi, Taeko, Ando, Koichi, Kitano, Tomohisa

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Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications von Manabe, Kenzo, Takahashi, Kensuke, Ikarashi, Taeko, Morioka, Ayuka, Watanabe, Heiji, Yoshihara, Takuya, Tatsumi, Toru

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High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics von Takahashi, Kensuke, Manabe, Kenzo, Morioka, Ayuka, Ikarashi, Taeko, Yoshihara, Takuya, Watanabe, Heiji, Tatsumi, Toru

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Facet formation mechanism of silicon selective epitaxial layer by Si ultrahigh vacuum chemical vapor deposition von Aoyama, Tohru, Ikarashi, Taeko, Miyanaga, Keiko, Tatsumi, Toru

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Ring-distribution of oxygen precipitates in Czochralski silicon revealed by low-temperature infrared absorption spectroscopy von ONO, H, IKARASHI, T

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Bonding configurations of nitrogen absorption peak at 960 cm−1 in silicon oxynitride films von Ono, Haruhiko, Ikarashi, Taeko, Miura, Yoshinao, Hasegawa, Eiji, Ando, Koichi, Kitano, Tomohisa

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Anomalous ring-shaped distribution of oxygen precipitates in a Czochralski-grown silicon crystal von Ono, Haruhiko, Ikarashi, Taeko, Kimura, Shigeru, Tanikawa, Akio

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Preanneal effect on the ring-shaped distribution of oxygen precipitates in Czochralski-grown silicon von Ono, Haruhiko, Ikarashi, Taeko, Kimura, Shigeru, Tanikawa, Akio

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Minute strain fields due to vacancy type defects in a rapidly cooled Czochralski-grown silicon crystal von KIMURA, S, ONO, H, IKARASHI, T, ISHIKAWA, T

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Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growth von Terashima, Koichi, Tanabe, Akihito, Nakagawa, Takashi, Mori, Kaoru, Ikarashi, Taeko, Nakatsuru, Junko, Date, Hiroki, Ikemoto, Manabu, Tatsumi, Toru

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Formation mechanism of interfacial Si–oxide layers during postannealing of Ta2O5/Si von Ono, Haruhiko, Hosokawa, Yumiko, Ikarashi, Taeko, Shinoda, Keisuke, Ikarashi, Nobuyuki, Koyanagi, Ken-ichi, Yamaguchi, Hiromu

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Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen von Ono, Haruhiko, Ikarashi, Taeko, Ogura, Atsushi

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Luminescence Centers in High-Energy Ion-Implanted Silicon von Terashima, Koichi, Ikarashi, Taeko, Watanabe, Masahito, Kitano, Tomohisa

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Band-edge emission from strained SiGe alloy layers on Ge(100) substrates von Terashima, Koichi, Ikarashi, Taeko, Tweet, Douglas, Miyanaga, Keiko, Tatsumi, Toru, Tajima, Michio

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An advanced technique for fabricating hemispherical-grained (HSG) silicon storage electrodes von Watanabe, H., Tatsumi, T., Ikarashi, T., Sakai, A., Aoto, N., Kikkawa, T.

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Dual workfunction Ni-Silicide/HfSiON gate stacks by phase-controlled full-silicidation (PC-FUSI) technique for 45nm-node LSTP and LOP devices von Takahashi, K., Manabe, K., Ikarashi, T., Ikarashi, N., Hase, T., Yoshihara, T., Watanabe, H., Tatsumi, T., Mochizuki, Y.

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Relation between Minute Lattice Strain and Anomalous Oxygen Precipitation in a Czochralski-Grown Silicon Crystal von Kimura, Shigeru, Ikarashi, Taeko, Ishikawa, Tetsuya, Tanikawa, Akio

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Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention von Sunamura, H., Ikarashi, T., Morioka, A., Kotsuji, S., Oshida, M., Ikarashi, N., Fujieda, S., Watanabe, H.

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High mobility MISFET with low trapped charge in HfSiO films von Morioka, Ayuka, Watanabe, Hirohito, Miyamura, Makoto, Tatsumi, Toru, Saitoh, Motohumi, Ogura, Takashi, Iwamoto, Toshiyuki, Ikarashi, Taeko, Saito, Yukishige, Okada, Yuko, Watanabe, Heiji, Mochiduki, Yasunori, Mogami, Tohru

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A highly manufacturable low power and high speed HfSiO CMOS FET with dual poly-Si gate electrodes von Iwamoto, Toshiyuki, Ogura, Takashi, Terai, Masayuki, Watanabe, Hirohito, Watanabe, Heiji, Ikarashi, Nobuyuki, Miyamura, Makoto, Tatsumi, Toru, Saitoh, Motofumi, Morioka, Ayuka, Watanabe, Koji, Saito, Yukishige, Yabe, Yuko, Ikarashi, Taeko, Masuzaki, Koji, Mochizuki, Yasunori, Mogami, Tohru

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