Silicon carbide wafer bonding by modified surface activated bonding method von Suga, Tadatomo, Mu, Fengwen, Fujino, Masahisa, Takahashi, Yoshikazu, Nakazawa, Haruo, Iguchi, Kenichi

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Direct Wafer Bonding of SiC-SiC at Room Temperature by SAB Method von Mu, Fengwen, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Fujino, Masahisa, Suga, Tadatomo

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De-bondable SiC SiC wafer bonding via an intermediate Ni nano-film von Mu, Fengwen, Uomoto, Miyuki, Shimatsu, Takehito, Wang, Yinghui, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Higurashi, Eiji, Suga, Tadatomo

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A comparison study: Direct wafer bonding of SiC-SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam von Mu, Fengwen, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Fujino, Masahisa, He, Ran, Suga, Tadatomo

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De-bondable SiCSiC wafer bonding via an intermediate Ni nano-film von Mu, Fengwen, Uomoto, Miyuki, Shimatsu, Takehito, Wang, Yinghui, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Higurashi, Eiji, Suga, Tadatomo

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Room-temperature wafer bonding of SiC-Si by modified surface activated bonding with sputtered Si nanolayer von Mu, Fengwen, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Fujino, Masahisa, Suga, Tadatomo

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SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS von IGUCHI, Kenichi

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE von IGUCHI KENICHI

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Semiconductor device and method of manufacturing semiconductor device von Iguchi, Kenichi, Nakazawa, Haruo

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE von IGUCHI Kenichi

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Method for processing semiconductor substrate and method for manufacturing semiconductor device in which said processing method is used von Iguchi Kenichi

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Apparatus for doping impurities, method for doping impurities, and method for manufacturing semiconductor device von Iguchi Kenichi

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Doping system, doping method and method for manufacturing silicon carbide semiconductor device von Iguchi, Kenichi, Nakazawa, Haruo

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Semiconductor device von Iguchi Kenichi

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE von IGUCHI, Kenichi, NAKAZAWA, Haruo

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APPARATUS FOR DOPING IMPURITIES, METHOD FOR DOPING IMPURITIES, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE von IGUCHI Kenichi

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Method of manufacturing semiconductor device by removing a bulk layer to expose an epitaxial-growth layer and by removing portions of a supporting-substrate to expose portions of t... von Iguchi, Kenichi, Nakazawa, Haruo

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METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE IN WHICH SAID PROCESSING METHOD IS USED von IGUCHI KENICHI

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DOPING SYSTEM, DOPING METHOD AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE von IGUCHI, Kenichi, NAKAZAWA, Haruo

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Gas sensor and method for manufacturing same von Tanaka, Tetsuro, Ito, Chika, Iguchi, Kenichi, Takahashi, Ken

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