Effect of (GaN/AlN) alternating-source-feeding buffer layer in GaN growth on Al2O3 and silicon by RF-MBE von Yamaguchi, Tomohiro, Tajimi, Daiki, Hayashi, Masato, Igaki, Tatsuhiro, Sugiura, Yohei, Honda, Tohru

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Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by surface modification using the aluminum facepack technique von Honda, Tohru, Sakai, Naoyuki, Komiyama, Shigetoshi, Hayashi, Masato, Igaki, Tatsuhiro

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Effect of (GaN/AlN) alternating‐source‐feeding buffer layer in GaN growth on Al 2 O 3 and silicon by RF‐MBE von Yamaguchi, Tomohiro, Tajimi, Daiki, Hayashi, Masato, Igaki, Tatsuhiro, Sugiura, Yohei, Honda, Tohru

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Effect of (GaN/AlN) alternating-source-feeding buffer layer in GaN growth on Al sub(2)O sub(3) and silicon by RF-MBE von Yamaguchi, Tomohiro, Tajimi, Daiki, Hayashi, Masato, Igaki, Tatsuhiro, Sugiura, Yohei, Honda, Tohru

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