Growth of bulk single crystal ScAlMgO4 boules and GaN films on ScAlMgO4 substrates for GaN-based optical devices, high-power and high-frequency transistors von Fukuda, Tsuguo, Shiraishi, Yuji, Nanto, Toki, Fujii, Takashi, Sugiyama, Kazumasa, Simura, Rayko, Iechi, Hiroyuki, Tadatomo, Kazuyuki

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Electrical characteristics of flexible organic static induction transistors under bending conditions von Watanabe, Yasuyuki, Iechi, Hiroyuki, Kudo, Kazuhiro

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Characteristics of organic inverters using vertical- and lateral-type organic transistors von Watanabe, Yasuyuki, Iechi, Hiroyuki, Kudo, Kazuhiro

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Organic Complementary Inverters Based on Step-Edge Vertical Channel Organic Field-Effect Transistors von Pu, Fanghua, Yamauchi, Hiroshi, Iechi, Hiroyuki, Nakamura, Masakazu, Kudo, Kazuhiro

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Inverter Circuits using Pentacene and ZnO Transistors von Iechi, Hiroyuki, Watanabe, Yasuyuki, Kudo, Kazuhiro

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Organic Inverter Using Monolithically Stacked Static Induction Transistors von Iechi, Hiroyuki, Watanabe, Yasuyuki, Yamauchi, Hiroshi, Kudo, Kazuhiro

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Growth of bulk single crystal ScAlMgO4 boules and GaN films on ScAlMgO4 substrates for GaN-based optical devices, high-power and high-frequency transistors von Fukuda, Tsuguo, Shiraishi, Yuji, Nanto, Toki, Fujii, Takashi, Sugiyama, Kazumasa, Simura, Rayko, Iechi, Hiroyuki, Tadatomo, Kazuyuki

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Improvement in On/Off Ratio of Pentacene Static Induction Transistors with Ultrathin CuPc Layer von Watanabe, Yasuyuki, Iechi, Hiroyuki, Kudo, Kazuhiro

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Improvement in On/Off Ratio of Pentacene Static Induction Transistors by Controlling Hole Injection Barrier von Watanabe, Yasuyuki, Iechi, Hiroyuki, Kudo, Kazuhiro

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Vertical type organic light emitting device using thin-film ZnO electrode von Iechi, Hiroyuki, Sakai, Masatoshi, Nakamura, Kenji, Iizuka, Masaaki, Nakamura, Masakazu, Kudo, Kazuhiro

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Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters von IECHI, Hiroyuki, WATANABE, Yasuyuki, YAMAUCHI, Hiroshi, KUDO, Kazuhiro

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Fabrication and evaluation of complementary logic circuits using zinc oxide and pentacene thin film transistor von Iechi, Hiroyuki, Watanabe, Yasuyuki, Yamauchi, Hiroshi, Kudo, Kazuhiro

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Vertical-type organic device using thin-film ZnO transparent electrode von Iechi, Hiroyuki, Okawara, Takeshi, Sakai, Masatoshi, Nakanura, Masakazu, Kudo, Kazuhiro

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Growth of 3”φScAlMgO4 single crystal by CZ method von Shiraishi, Yuji, Nanto, Toki, Fukuda, Tsuguo, Hiroyuki, Iechi

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Characterization of ScAlMgO4 crystal by CZ method to grow GaN epitaxal film von Fujii, Takashi, Shiraishi, Yuji, Nanto, Toki, Fukuda, Tsuguo, Iechi, Hiroyuki, Endoh, Ryo, Sugie, Ryuichi

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Standalone High-Quality GaN Substrates grown on ScAlMgO4 Substrate using SiO2-Wide-Mask-Patterns by HVPE von Kaneko, Takushi, Shingu, Shogo, Yuki, Koichiro, Inomoto, Ryo, Okada, Narihito, Tadatomo, Kazuyuki, Iechi, Hiroyuki, Yamamoto, Gyo, Ohno, Hiroshi, Ishibashi, Akihiko, Fukuda, Tsuguo

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Fabrication and Evaluation of Complimentary Logic Circuits Using Zinc Oxide and Pentacene Thin Film Transistor von Iechi, Hiroyuki, Watanabe, Yasuyuki, Yamauchi, Hiroshi, Kudo, Kazuhiro

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Interrelation of Si internal stress and Si/SiO2 interface stress von IECHI, H, SATOH, S

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Selectively doped n-GaInP/GaAs heterostructures grown by MOCVD von TONE, K, NAKAYAMA, T, IECHI, H, OHTSU, K, KUKIMOTO, H

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SENSE DEVICE von IECHI HIROYUKI

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