Electronic Defects in Amorphous Oxide Semiconductors: A Review von Ide, Keisuke, Nomura, Kenji, Hosono, Hideo, Kamiya, Toshio

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Shallow Valence Band of Rutile GeO2 and P‑type Doping von Niedermeier, Christian A, Ide, Keisuke, Katase, Takayoshi, Hosono, Hideo, Kamiya, Toshio

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Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes von Ide, Keisuke, Watanabe, Naoto, Katase, Takayoshi, Sasase, Masato, Kim, Junghwan, Ueda, Shigenori, Horiba, Koji, Kumigashira, Hiroshi, Hiramatsu, Hidenori, Hosono, Hideo, Kamiya, Toshio

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Ion Substitution Effect on Defect Formation in Two-Dimensional Transition Metal Nitride Semiconductors, AETiN2 (AE = Ca, Sr, and Ba) von He, Xinyi, Katase, Takayoshi, Ide, Keisuke, Hosono, Hideo, Kamiya, Toshio

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Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors von Ide, Keisuke, Kikuchi, Yutomo, Nomura, Kenji, Kimura, Mutsumi, Kamiya, Toshio, Hosono, Hideo

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Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen von Niedermeier, Christian A., Rhode, Sneha, Fearn, Sarah, Ide, Keisuke, Moram, Michelle A., Hiramatsu, Hidenori, Hosono, Hideo, Kamiya, Toshio

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Intrinsic and Extrinsic Defects in Layered Nitride Semiconductor SrTiN2 von He, Xinyi, Xiao, Zewen, Katase, Takayoshi, Ide, Keisuke, Hosono, Hideo, Kamiya, Toshio

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Local Structure Properties of Hydrogenated and Nonhydrogenated Amorphous In–Ga–Zn–O Thin Films Using XAFS and High-Energy XRD von Kumara, Loku Singgappulige Rosantha, Ishikawa, Kyohei, Ide, Keisuke, Hosono, Hideo, Kamiya, Toshio, Sakata, Osami

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Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O von Ide, Keisuke, Nomura, Kenji, Hiramatsu, Hidenori, Kamiya, Toshio, Hosono, Hideo

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Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors von Shiraishi, Akihiro, Kimura, Shigeru, He, Xinyi, Watanabe, Naoto, Katase, Takayoshi, Ide, Keisuke, Minohara, Makoto, Matsuzaki, Kosuke, Hiramatsu, Hidenori, Kumigashira, Hiroshi, Hosono, Hideo, Kamiya, Toshio

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Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films von Tang, Haochun, Ishikawa, Kyohei, Ide, Keisuke, Hiramatsu, Hidenori, Ueda, Shigenori, Ohashi, Naoki, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

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High-Mobility Metastable Rock-Salt Type (Sn,Ca)Se Thin Film Stabilized by Direct Epitaxial Growth on a YSZ (111) Single-Crystal Substrate von He, Xinyi, Chen, Jinshuai, Katase, Takayoshi, Minohara, Makoto, Ide, Keisuke, Hiramatsu, Hidenori, Kumigashira, Hiroshi, Hosono, Hideo, Kamiya, Toshio

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Origins of the coloration from structure and valence state of bismuth oxide glasses von Saitoh, Akira, Hayashi, Katsuki, Hanzawa, Kota, Ueda, Shigenori, Kawachi, Shiro, Yamaura, Jun-ichi, Ide, Keisuke, Kim, Junghwan, Tricot, Grégory, Matsuishi, Satoru, Mitsui, Kazuki, Shimizu, Tatsuki, Mori, Masami, Hosono, Hideo, Hiramatsu, Hidenori

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Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor von Kim, Junghwan, Sekiya, Takumi, Miyokawa, Norihiko, Watanabe, Naoto, Kimoto, Koji, Ide, Keisuke, Toda, Yoshitake, Ueda, Shigenori, Ohashi, Naoki, Hiramatsu, Hidenori, Hosono, Hideo, Kamiya, Toshio

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Multiple states and roles of hydrogen in p-type SnS semiconductors von Xiao, Zewen, Ran, Fan-Yong, Liao, Min, Hiramatsu, Hidenori, Ide, Keisuke, Hosono, Hideo, Kamiya, Toshio

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Degenerated Hole Doping and Ultra‐Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution von He, Xinyi, Zhang, Haoyun, Nose, Takumi, Katase, Takayoshi, Tadano, Terumasa, Ide, Keisuke, Ueda, Shigenori, Hiramatsu, Hidenori, Hosono, Hideo, Kamiya, Toshio

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Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors von Tang, Haochun, Ide, Keisuke, Hiramatsu, Hidenori, Ueda, Shigenori, Ohashi, Naoki, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

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Multiple Color Inorganic Thin‐Film Phosphor, RE‐Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature von Watanabe, Naoto, Ide, Keisuke, Kim, Junghwan, Katase, Takayoshi, Hiramatsu, Hidenori, Hosono, Hideo, Kamiya, Toshio

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Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In‐Ga‐Zn‐O: Ultralow Optimum Oxygen Supply and Bandgap Widening von Ide, Keisuke, Ishikawa, Kyohei, Tang, Haochun, Katase, Takayoshi, Hiramatsu, Hidenori, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

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Electronic and Lattice Thermal Conductivity Switching by 3D−2D Crystal Structure Transition in Nonequilibrium (Pb1−xSnx)Se von Nishimura, Yusaku, He, Xinyi, Katase, Takayoshi, Tadano, Terumasa, Ide, Keisuke, Kitani, Suguru, Hanzawa, Kota, Ueda, Shigenori, Hiramatsu, Hidenori, Kawaji, Hitoshi, Hosono, Hideo, Kamiya, Toshio

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