THE RENAISSANCE OF ENGLISH LEGAL HISTORY von Ibbetson, D.J.

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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors von Ibbetson, J. P., Fini, P. T., Ness, K. D., DenBaars, S. P., Speck, J. S., Mishra, U. K.

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The effect of coping/veneer thickness on the fracture toughness and residual stress of implant supported, cement retained zirconia and metal–ceramic crowns von Millen, Christopher S, Reuben, Robert L, Ibbetson, Richard J

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Reducing Flightless I expression decreases severity of psoriasis in an imiquimod‐induced murine model of psoriasiform dermatitis von Chong, H.T., Yang, G.N., Sidhu, S., Ibbetson, J., Kopecki, Z., Cowin, A.J.

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Very-high power density AlGaN/GaN HEMTs von Yi-Feng Wu, Kapolnek, D., Ibbetson, J.P., Parikh, P., Keller, B.P., Mishra, U.K.

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Job satisfaction among dually qualified dental hygienist-therapists in UK primary care: a structural model von Turner, S, Ross, M. K, Ibbetson, R. J

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Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy von Smorchkova, I. P., Elsass, C. R., Ibbetson, J. P., Vetury, R., Heying, B., Fini, P., Haus, E., DenBaars, S. P., Speck, J. S., Mishra, U. K.

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High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN von Parish, G., Keller, S., Kozodoy, P., Ibbetson, J. P., Marchand, H., Fini, P. T., Fleischer, S. B., DenBaars, S. P., Mishra, U. K., Tarsa, E. J.

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Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition von Hansen, P. J., Strausser, Y. E., Erickson, A. N., Tarsa, E. J., Kozodoy, P., Brazel, E. G., Ibbetson, J. P., Mishra, U., Narayanamurti, V., DenBaars, S. P., Speck, J. S.

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Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition von Marchand, H., Wu, X. H., Ibbetson, J. P., Fini, P. T., Kozodoy, P., Keller, S., Speck, J. S., DenBaars, S. P., Mishra, U. K.

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The acceptability of dually-qualified dental hygienist-therapists to general dental practitioners in South-East Scotland von Ross, M. K, Ibbetson, R. J, Turner, S

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Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics von Kadow, C., Fleischer, S. B., Ibbetson, J. P., Bowers, J. E., Gossard, A. C., Dong, J. W., Palmstrøm, C. J.

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Solar-blind AlGaN-based inverted heterostructure photodiodes von Tarsa, E. J., Kozodoy, P., Ibbetson, J., Keller, B. P., Parish, G., Mishra, U.

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The impact of teamworking on the knowledge and attitudes of final year dental students von Ross, M. K, Turner, S, Ibbetson, R. J

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Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction von Fini, P, Marchand, H, Ibbetson, J.P, DenBaars, S.P, Mishra, U.K, Speck, J.S

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Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy von Smorchkova, I. P., Haus, E., Heying, B., Kozodoy, P., Fini, P., Ibbetson, J. P., Keller, S., DenBaars, S. P., Speck, J. S., Mishra, U. K.

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Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth von Chichibu, S. F., Marchand, H., Minsky, M. S., Keller, S., Fini, P. T., Ibbetson, J. P., Fleischer, S. B., Speck, J. S., Bowers, J. E., Hu, E., Mishra, U. K., DenBaars, S. P., Deguchi, T., Sota, T., Nakamura, S.

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Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition von Marchand, H., Ibbetson, J.P., Fini, P.T., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.

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Electrical characterization of GaN p-n junctions with and without threading dislocations von Kozodoy, P., Ibbetson, J. P., Marchand, H., Fini, P. T., Keller, S., Speck, J. S., DenBaars, S. P., Mishra, U. K.

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High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers von Fini, P., Zhao, L., Moran, B., Hansen, M., Marchand, H., Ibbetson, J. P., DenBaars, S. P., Mishra, U. K., Speck, J. S.

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