Simulation of Graphene Nanoribbon Field-Effect Transistors von Fiori, G., Iannaccone, G.

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Ultralow-Voltage Bilayer Graphene Tunnel FET von Fiori, G., Iannaccone, G.

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Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam von Katagiri, Y, Nakamura, T, Ishii, A, Ohata, C, Hasegawa, M, Katsumoto, S, Cusati, T, Fortunelli, A, Iannaccone, G, Fiori, G, Roche, S, Haruyama, J

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A Sub-1-V, 10 ppm/ ^C, Nanopower Voltage Reference Generator von De Vita, G., Iannaccone, G.

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Characterization of Failures in an Operational IP Backbone Network von Markopoulou, A., Iannaccone, G., Bhattacharyya, S., Chen-Nee Chuah, Ganjali, Y., Diot, C.

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On the Possibility of Tunable-Gap Bilayer Graphene FET von Fiori, G., Iannaccone, G.

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Modeling of Electron Devices Based on 2-D Materials von Marin, E. G., Perucchini, M., Marian, D., Iannaccone, G., Fiori, G.

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Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS von Giusi, G., Marega, G. M., Kis, A., Iannaccone, G.

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First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials von Marin, E G, Marian, D, Iannaccone, G, Fiori, G

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Design criteria for the RF section of UHF and microwave passive RFID transponders von De Vita, G., Iannaccone, G.

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Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs von Youngki Yoon, Fiori, G., Seokmin Hong, Iannaccone, G., Jing Guo

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Attenuation limits in longitudinal phononic crystals von Luschi, L., Iannaccone, G., Pieri, F.

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A Semianalytical Model of Bilayer-Graphene Field-Effect Transistor von Cheli, M., Fiori, G., Iannaccone, G.

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A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry von Fiori, G., Iannaccone, G., Klimeck, G.

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A BIM-enabled Decision Support System to support large-scale energy retrofitting processes and off-site solutions for envelope insulation von Cucuzza, M, Di Stefano, A G, Iannaccone, G, Masera, G

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Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions von Logoteta, D., Cao, J., Pala, M., Dollfus, P., Lee, Y., Iannaccone, G.

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Physics-based compact model of nanoscale MOSFETs-Part I: transition from drift-diffusion to ballistic transport von Mugnaini, G., Iannaccone, G.

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Variability‐aware design of a bandgap voltage reference with 0.18% standard deviation and 68 nW power consumption von Cucchi, F., Di Pascoli, S., Iannaccone, G.

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Towards a model for circular renovation of the existing building stock: a preliminary study on the potential for CO2 reduction of bio-based insulation materials von Pittau, F, Iannaccone, G, Lumia, G, Habert, G

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Earthquake early warning system in southern Italy: Methodologies and performance evaluation von Zollo, A., Iannaccone, G., Lancieri, M., Cantore, L., Convertito, V., Emolo, A., Festa, G., Gallovič, F., Vassallo, M., Martino, C., Satriano, C., Gasparini, P.

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