IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels von Yokogawa, Sozo, Oshiyama, Itaru, Ikeda, Harumi, Ebiko, Yoshiki, Hirano, Tomoyuki, Saito, Suguru, Oinoue, Takashi, Hagimoto, Yoshiya, Iwamoto, Hayato

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Mechanism of SiN etching rate fluctuation in atomic layer etching von Hirata, Akiko, Fukasawa, Masanaga, Kugimiya, Katsuhisa, Nagaoka, Kojiro, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Iwamoto, Hayato

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Structural and electrical characteristics of ion-induced Si damage during atomic layer etching von Hirata, Akiko, Fukasawa, Masanaga, Kugimiya, Katsuhisa, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Hagimoto, Yoshiya, Iwamoto, Hayato

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High-throughput SiN ALE: surface reaction and ion-induced damage generation mechanisms von Hirata, Akiko, Fukasawa, Masanaga, Tercero, Jomar Unico, Kugimiya, Katsuhisa, Hagimoto, Yoshiya, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Iwamoto, Hayato

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Comprehensive research on nitrided SiO 2 /SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes von Watanabe, Heiji, Kobayashi, Takuma, Iwamoto, Hayato, Nakanuma, Takato, Hirai, Hirohisa, Sometani, Mitsuru

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Comprehensive research on nitrided SiO2/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes von Watanabe, Heiji, Kobayashi, Takuma, Iwamoto, Hayato, Nakanuma, Takato, Hirai, Hirohisa, Sometani, Mitsuru

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Effect of Post-Etch Wet Cleaning on GaAs Surfaces von Hirano, Tomoki, Saito, Suguru, Iwamoto, Hayato, Hagimoto, Yoshiya

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Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method von Kuboi, Nobuyuki, Matsugai, Hiroyasu, Tatsumi, Tetsuya, Kobayashi, Shoji, Hagimoto, Yoshiya, Iwamoto, Hayato

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Band-Edge High-Performance Metal-Gate/High- \kappa nMOSFET Using \hbox\hbox/\hbox Stack von Ando, T., Hirano, T., Tai, K., Yamaguchi, S., Yoshida, S., Iwamoto, H., Kadomura, S., Watanabe, H.

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Mechanism of SiN etching rate fluctuation in atomic layer etchinga von Hirata, Akiko, Fukasawa, Masanaga, Kugimiya, Katsuhisa, Nagaoka, Kojiro, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Iwamoto, Hayato

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Five-step plasma-enhanced atomic layer etching of silicon nitride with a stable etched amount per cycle von Hirata, Akiko, Fukasawa, Masanaga, Tercero, Jomar U., Kugimiya, Katsuhisa, Hagimoto, Yoshiya, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Iwamoto, Hayato

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Evaluation of the Plasmaless Gaseous Etching Process von Orii, Takehiko, Hagimoto, Yoshiya, Muraki, Yusuke, Iwamoto, Hayato, Ugajin, Hajime, Miyakoshi, Daisuke

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Advances in CMOS image sensors utilizing a 3D IC stacking technology von Iwamoto, Hayato

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(Invited) Bonding Strength of Cu-Cu Hybrid Bonding for 3D Integration Process von Fujii, Nobutoshi, Furuse, Shunsuke, Yoshioka, Hirotaka, Ogawa, Naoki, Yamada, Taichi, Hirano, Takaaki, Saito, Suguru, Hagimoto, Yoshiya, Iwamoto, Hayato

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8.3 M-Pixel 480-fps Global-Shutter CMOS Image Sensor with Gain-Adaptive Column ADCs and Chip-on-Chip Stacked Integration von Oike, Yusuke, Akiyama, Kentaro, Hung, Luong D., Niitsuma, Wataru, Kato, Akihiko, Sato, Mamoru, Kato, Yuri, Nakamura, Wataru, Shiroshita, Hiroshi, Sakano, Yorito, Kitano, Yoshiaki, Nakamura, Takuya, Toyama, Takayuki, Iwamoto, Hayato, Ezaki, Takayuki

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Characterization of Wet Chemical Atomic Layer Etching of InGaAs von Hirano, Tomoki, Fukatani, Takashi, Saito, Suguru, Iwamoto, Hayato, Nishio, Kenya, Hagimoto, Yoshiya

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Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water von Nishio, Kenya, Hagimoto, Yoshiya, Oinoue, Takashi, Saito, Suguru, Ida, Junichi, Iwamoto, Hayato, Ogawa, Yuichi

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Behavior Analysis of Si Etching Process with HF/HNO3 Mixture in Single-Spin Wafer Process von Saito, Suguru, Iwamoto, Hayato, Hagimoto, Yoshiya, Oinoue, Takashi, Okuyama, Atsushi

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Effect of WET treatment on Group III-V Compound Semiconductor Surface von Saito, Suguru, Iwamoto, Hayato, Nishio, Kenya, Hagimoto, Yoshiya

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Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor von Ikuta, Tetsuya, Miyanami, Yuki, Fujita, Shigeru, Iwamoto, Hayato, Kadomura, Shingo, Shimura, Takayoshi, Watanabe, Heiji, Yasutake, Kiyoshi

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