Substrate defects affecting gate oxide integrity von Itsumi, Manabu

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Octahedral void defects observed in the bulk of Czochralski silicon von Ueki, Takemi, Itsumi, Manabu, Takeda, Tadao

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The origin of defects in SiO2 thermally grown on Czochralski silicon substrates von Itsumi, Manabu, Tomita, Masato, Yamawaki, Masataka

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Thermal dissociation process of hydrogen atoms in plasma-enhanced chemical vapor deposited silicon nitride films von Maeda, Masahiko, Itsumi, Manabu

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Contamination determination for silicon carbide Cantilever forks in diffusion furnaces von ITSUMI, M

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Characterization and Elimination of Defects in Oxide Layers Grown on Czochralski Silicon Substrates von Itsumi, Manabu

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Octahedral void defects in Czochralski silicon von Itsumi, Manabu

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Dependence of the density of defects in the oxide on Czochralski silicon on its thickness von Itsumi, Manabu, Maeda, Masahiko, Ueki, Takemi

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Method of determining metal contamination by combining p-type Si and n-type Si recombination lifetime measurements von ITSUMI, M

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Octahedral-structured gigantic precipitates as the origin of gate-oxide defects in metal-oxide-semiconductor large-scale-integrated circuits von ITSUMI, M, AKIYA, H, UEKI, T, TOMITA, M, YAMAWAKI, M

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Octahedral void structure observed in grown-in defects in the bulk of standard Czochralski-Si for MOS LSIs von UEKI, T, ITSUMI, M, TAKEDA, T

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Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon von Ueki, Takemi, Itsumi, Manabu, Takeda, Tadao

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Carbon in Grown-in Defects in Czochralski Silicon and Its Influence on Gate-Oxide Defects von Ueki, Takemi, Itsumi, Manabu, Takeda, Tadao

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Atmosphere dependence in phosphorus pileup at the silicon surface during isochronal heating von SATO, Y, ITSUMI, M

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Oxide ridge formed around octahedral void defects on (001)-oriented Czochralski silicon von Itsumi, Manabu, Maeda, Masahiko, Ueki, Takemi, Tazawa, Satoshi

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Recovery of recombination lifetime by pouring de-ionized water onto a rotating plasma-damaged wafer von Itsumi, Manabu, Aoyama, Shinji

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Observation of Shrinkage Process by Annealing of Grown-in Defect in Cz–Si Crystal von Ueki, Takemi, Itsumi, Manabu, Nakajima, Sigeru, Komine, Yukio, Inoue, Naohisa

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Shrinkage of Grown-in Defects in Czochralski Silicon During Thermal Annealing in Vacuum von Ueki, Takemi, Itsumi, Manabu, Takeda, Tadao, Yoshida, Kiyokazu, Takaoka, Akio, Nakajima, Sigeru

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Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon von Itsumi, Manabu, Ueki, Takemi, Watanabe, Masaki, Yabumoto, Norikuni

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Impurity dependence of oxide defects in Czochralski silicon von Itsumi, Manabu, Akiya, Hideo, Tomita, Masato, Ueki, Takemi, Yamawaki, Masataka

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