Intrinsic gettering of copper in silicon wafers von ISOMAE, Seiichi, ISHIDA, Hidetsugu, ITOGA, Toshihiko, HOZAWA, Kazuyuki

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METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT von ITOGA, Toshihiko

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The Effect of Isopropyl Alcohol Adsorption on the Electrical Characteristics of Thin Oxide von Motai, Kumi, Itoga, Toshihiko, Irie, Takashi

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X-Ray photoelectron spectroscopy study of native oxidation on misoriented Si(100) von YANO, F, ITOGA, T, KANEHORI, K

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A ceramic plasma torch for determining silicon content in HF solutions by inductively coupled plasma atomic emission spectrometry von MATSUBARA, A, KOJIMA, H, ITOGA, T, KANEHORI, K

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New Technique to Determine Gettering Efficiency of Heavy Metals and Its Application to Carbon-Ion-Implanted Si Epitaxial Wafers von Itoga, Toshihiko, Hozawa, Kazuyuki, Takeda, Kazuo, Isomae, Seiichi, Ohkura, Makoto

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12.1: 45°C Low-Temperature Poly-Si TFT Fabrication Process Applicable to the Display Manufacturing Using 730×920mm2 Glass Substrates von Ohkura, Makoto, Shimomura, Shigeo, Miyazawa, Toshio, Itoga, Toshihiko, Shiba, Takeo

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Advantages of fluorine introduction in boron implanted shallow p+/n-junction formation von OHYU, K, ITOGA, T, NATSUAKI, N

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Efficiency of Intrinsic Gettering for Copper in Silicon von Hozawa, Kazuyuki, Ishida, Hidetsugu, Isomae, Seiichi, Itoga, Toshihiko

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SEMICONDUCTOR DEVICE von KAITOH, Takuo, ITOGA, Toshihiko

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Influence of ion-implantation on native oxidation of Si in a clean-room atmosphere von Yano, Fumiko, Hiraoka, Akiko, Itoga, Toshihiko, Kojima, Hisao, Kanehori, Keiichi, Mitsui, Yasuhiro

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MANUFACTURING METHOD OF PIEZOELECTRIC ELEMENT von ITOGA TOSHIHIKO

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Degradation of n+/p junction characteristics by aluminum contamination von ITOGA, T, KOJIMA, H, HIRAIWA, A, OHKURA, M

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The increase of the native oxide thickness on H-terminated Si surfaces by gaseous contamination in a clean room atmosphere von ITOGA, T, KOJIMA, H, YUGAMI, J, OHKURA, M

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Organic electro-luminescence display device and manufacturing method of an organic electro-luminescence display device von Nakaie, Hiroki, Itoga, Toshihiko

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Development of ammonia adsorption filter and its application to LSI manufacturing environment von SAIKI, A, OSHIO, R, SUZUKI, M, TANAKA, A, ITOGA, T, YAMANAKA, R

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Ultra-shallow depth profiling of arsenic implants in silicon by hydride generation-inductively coupled plasma atomic emission spectrometry von MATSUBARA, A, KOJIMA, H, ITOGA, T, KANEHORI, K

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ORGANIC ELECTRO-LUMINESCENCE DISPLAY DEVICE AND MANUFACTURING METHOD OF AN ORGANIC ELECTRO-LUMINESCENCE DISPLAY DEVICE von NAKAIE, Hiroki, ITOGA, Toshihiko

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Photoluminescence and acceptor state of Na in ZnSe von ISSHIKI, M, ITOGA, T, MASUMOTO, K, MOCHIZUKI, K, UCHIDA, W

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SEMICONDUCTOR DEVICE INCLUDING A FLEXIBLE SUBSTRATE von HIRAMATSU, Masato, NISHINOHARA, Takuma, KIMURA, Yasukazu, ITOGA, Toshihiko

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