Formation of quantum dots in GaN/AlGaN FETs von Otsuka, Tomohiro, Abe, Takaya, Kitada, Takahito, Ito, Norikazu, Tanaka, Taketoshi, Nakahara, Ken

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Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams von Uedono, Akira, Tanaka, Taketoshi, Ito, Norikazu, Nakahara, Ken, Egger, Werner, Hugenschmidt, Christoph, Ishibashi, Shoji, Sumiya, Masatomo

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Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si von TANAKA, Taketoshi, ITO, Norikazu, TAKADO, Shinya, KUZUHARA, Masaaki, NAKAHARA, Ken

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Zn-Doped GaN Comprising the Gate Structure of Normally Off AlGaN/GaN-HFETs von Ito, Norikazu, Tanaka, Taketoshi, Nakahara, Ken

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Removal of Thermally Sprayed Coatings Using a Plain Water Jet von FUKUSHIMA, Chiharu, ITO, Norikazu, SHINHARA, Yoshiko, KIDO, Mitsuo

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Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs von Matsumura, Kazuma, Abe, Takaya, Kitada, Takahito, Kumasaka, Takeshi, Ito, Norikazu, Tanaka, Taketoshi, Nakahara, Ken, Otsuka, Tomohiro

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Formation of quantum dots in GaN FETs von Abe, Takaya, Kitada, Takahito, Ito, Norikazu, Tanaka, Taketoshi, Nakahara, Ken, Otsuka, Tomohiro

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Identifying Causal Factors by Mean-value Replacement Contribution von HIRAI, Toshiya, ITO, Norikazu, KANO, Manabu

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Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation von Kashiwagi, Junichi, Fujiwara, Tetsuya, Akutsu, Minoru, Ito, Norikazu, Chikamatsu, Kentaro, Nakahara, Ken

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Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes von Nakahara, Ken, Tamura, Kentaro, Sakai, Mitsuhiko, Nakagawa, Daisuke, Ito, Norikazu, Sonobe, Masayuki, Takasu, Hidemi, Tampo, Hitoshi, Fons, Paul, Matsubara, Koji, Iwata, Kakuya, Yamada, Akimasa, Niki, Shigeru

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Deep-donor-induced suppression of current collapse in an AlGaN-GaN heterojunction structure grown on Si von TANAKA, Taketoshi, ITO, Norikazu, TAKADO, Shinya, KUZUHARA, Masaaki, NAKAHARA, Ken

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Extraction of net acceptor type trap density in semi‐insulating GaN layers grown on Si substrate by DC I–V measurement von Tanaka, Taketoshi, Ito, Norikazu, Akutsu, Minoru, Chikamatsu, Kentaro, Takado, Shinya, Nakahara, Ken

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Extraction of net acceptor type trap density in semi-insulating GaN layers grown on Si substrate by DC I-V measurement: Extraction of net acceptor type trap density in semi-insulat... von Tanaka, Taketoshi, Ito, Norikazu, Akutsu, Minoru, Chikamatsu, Kentaro, Takado, Shinya, Nakahara, Ken

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(Invited) Vacancy-Type Defects and Their Carrier Trapping Properties in GaN Studied by Monoenergetic Positron Beams von Uedono, Akira, Tanaka, Taketoshi, Ito, Norikazu, Nakahara, Ken, Egger, Werner, Hugenschmidt, Christoph, Ishibashi, Shoji, Sumiya, Masatomo

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NITRIDE SEMICONDUCTOR DEVICE von ITO, Norikazu

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Optical Gain and Optical Internal Loss of GaN-Based Laser Diodes Measured by Variable Stripe Length Method with Laser Processing von Kimura, Yoshinori, Ito, Atsuya, Miyachi, Mamoru, Takahashi, Hirokazu, Watanabe, Atsushi, Ota, Hiroyuki, Ito, Norikazu, Tanabe, Tetsuhiro, Sonobe, Masayuki, Chikuma, Kiyofumi

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SOLAR BATTERY ELEMENT AND SOLAR BATTERY ELEMENT MANUFACTURING METHOD von FUKUCHI Kenji, ITO Norikazu

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NITRID-HALBLEITERBAUTEIL von Ito, Norikazu

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Nitride semiconductor device von ITO NORIKAZU

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Inverter device and air conditioner including the same von ITO, Norikazu

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