Computational discovery of stable phases of graphene and h-BN van der Waals heterostructures composed of group III–V binary compounds von Akiyama, Toru, Kawamura, Takahiro, Ito, Tomonori

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Ab initio study for adsorption and desorption behavior at step edges of GaN(0001) surface von Akiyama, Toru, Ohka, Takumi, Nakamura, Kohji, Ito, Tomonori

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Effect of step edges on the adsorption behavior on vicinal AlN(0001) surface during metal-organic vapor phase epitaxy: An ab initio study von Akiyama, Toru, Ohka, Takumi, Nagai, Katsuya, Ito, Tomonori

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Effect of surface structural change on adsorption behavior on InAs wetting layer surface grown on GaAs(001) substrate von Akiyama, Toru, Yonemoto, Kazuhiro, Hishiki, Fumiaki, Ito, Tomonori

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Role of charged oxygen vacancies and substrate lattice constraint on structural stability of Ga2O3 polymorphs von Akiyama, Toru, Kawamura, Takahiro, Ito, Tomonori

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Role of an interfacial FeO layer in the electric-field-driven switching of magnetocrystalline anisotropy at the Fe/MgO interface von Nakamura, Kohji, Akiyama, Toru, Ito, Tomonori, Weinert, M., Freeman, A. J.

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Giant modification of the magnetocrystalline anisotropy in transition-metal monolayers by an external electric field von Nakamura, Kohji, Shimabukuro, Riki, Fujiwara, Yuji, Akiyama, Toru, Ito, Tomonori, Freeman, A J

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Ab initio study for adsorption and desorption behavior at step edges of AlN(0001) and GaN(0001) surfaces von Akiyama, Toru, Ohka, Takumi, Nakamura, Kohji, Ito, Tomonori

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An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Effects of Ag(1 1 1) substrate von Akiyama, Toru, Tsuboi, Yuma, Nakamura, Kohji, Ito, Tomonori

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An ab initio-based approach for the formation of pyramidal inversion domain boundaries in highly Mg-doped GaN von Niki, Katsuhide, Akiyama, Toru, Ito, Tomonori

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Electric field effects on magnetocrystalline anisotropy in ferromagnetic Fe monolayers von Shimabukuro, Riki, Nakamura, Kohji, Akiyama, Toru, Ito, Tomonori

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Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio -Based Approach von Kangawa, Yoshihiro, Akiyama, Toru, Ito, Tomonori, Shiraishi, Kenji, Nakayama, Takashi

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Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study von Ohka, Takumi, Akiyama, Toru, Pradipto, Abdul Muizz, Nakamura, Kohji, Ito, Tomonori

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Structures and stability of polar GaN thin films on ScAlMgO4 substrate: An ab initio-based study von Nakane, Harunobu, Akiyama, Toru, Nakamura, Kohji, Ito, Tomonori

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Theoretical study for misfit dislocation formation at InAs/GaAs(001) interface von Kaida, Ryo, Akiyama, Toru, Nakamura, Kohji, Ito, Tomonori

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Ab initio-based approach to novel behavior in semiconductor hetero-epitaxial growth von Ito, Tomonori, Akiyama, Toru, Nakamura, Kohji

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Electronic configurations and magnetic anisotropy in organometallic metallocenes von Nawa, Kenji, Kitaoka, Yukie, Nakamura, Kohji, Akiyama, Toru, Ito, Tomonori

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Equilibrium Morphologies of Faceted GaN under the Metalorganic Vapor‐Phase Epitaxy Condition: Wulff Construction Using Absolute Surface Energies von Seta, Yuki, Pradipto, Abdul-Muizz, Akiyama, Toru, Nakamura, Kohji, Ito, Tomonori

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Effective approach for calculating individual energy of step edges on polar AlN(0001) and GaN(0001) surfaces von Akiyama, Toru, Nakatani, Atsutaka, Shimizu, Tsunashi, Ohka, Takumi, Ito, Tomonori

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Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces von Akiyama, Toru, Shimizu, Tsunashi, Ito, Tomonori, Kageshima, Hiroyuki, Chokawa, Kenta, Shiraishi, Kenji

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