Microstructure of Stacking Fault Complex/Carrot Defects at Interface Between 4H-SiC Epitaxial Layers and Substrates von Sako, Hideki, Kobayashi, Kenji, Ohira, Kentaro, Isshiki, Toshiyuki

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Three-Dimensional Observation of Internal Defects in a β-Ga2O3 (001) Wafer Using the FIB–SEM Serial Sectioning Method von Ogawa, Kenichi, Ogawa, Naoya, Kosaka, Ryo, Isshiki, Toshiyuki, Yao, Yongzhao, Ishikawa, Yukari

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Proxy Re-Encryption in a Stronger Security Model Extended from CT-RSA2012 von Isshiki, Toshiyuki, Nguyen, Manh Ha, Tanaka, Keisuke

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Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect von Tatemizo, Nobuyuki, Imada, Saki, Okahara, Kizuna, Nishikawa, Haruki, Tsuruta, Kazuki, Ina, Toshiaki, Miura, Yoshio, Nishio, Koji, Isshiki, Toshiyuki

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Intriguing transmission electron microscopy images observed for perpendicularly oriented cylindrical microdomains of block copolymers von Ohnogi, Hiroshi, Isshiki, Toshiyuki, Sasaki, Sono, Sakurai, Shinichi

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Fine structure of tooth enamel in the yellowing human teeth: SEM and HRTEM studies von Wakasa, Masanobu, Nakanishi, Kuniyuki, Manago, Kenji, Isobe, Tsutomu, Eshita, Yoshiyuki, Okamoto, Masayuki, Isshiki, Toshiyuki

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Privacy-Preserving Fingerprint Authentication Resistant to Hill-Climbing Attacks von HIGO, Haruna, ISSHIKI, Toshiyuki, MORI, Kengo, OBANA, Satoshi

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Chemical Trend in Band Structure of 3d-Transition-Metal-Doped AlN Films von Nishio, Koji, Imada, Saki, Tatemizo, Nobuyuki, Miura, Yoshio, Isshiki, Toshiyuki

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Band structure and photoconductivity of blue-green light absorbing AlTiN films von Tatemizo, Nobuyuki, Miura, Yoshio, Nishio, Koji, Hirata, Shun, Sawa, Fumihiro, Fukui, Kazutoshi, Isshiki, Toshiyuki, Imada, Saki

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Attacks to the Proxy Re-Encryption Schemes from IWSEC2011 von Isshiki, Toshiyuki, Nguyen, Manh Ha, Tanaka, Keisuke

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Factoring-Based Proxy Re-Encryption Schemes von Isshiki, Toshiyuki, Nguyen, Manh Ha, Tanaka, Keisuke

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Formation of various-axis-oriented wurtzite nuclei and enlargement of the -axis-oriented region in AlFeN films deposited on Si(100) substrates von Imada, Saki, Isshiki, Toshiyuki, Tatemizo, Nobuyuki, Nishio, Koji, Mamishin, Shuichi, Suzuki, Yuya, Ito, Katsuji, Nitta, Kiyofumi, Suga, Hiroki, Sekizawa, Oki, Tamenori, Yusuke

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Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition von Nishiguchi, Taro, Nakamura, Mitsuhiro, Nishio, Koji, Isshiki, Toshiyuki, Nishino, Shigehiro

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Surface morphology and dislocation characteristics near the surface of 4H-SiC wafer using multi-directional scanning transmission electron microscopy von Sato, Takahiro, Orai, Yoshihisa, Suzuki, Yuya, Ito, Hiroyuki, Isshiki, Toshiyuki, Fukui, Munetoshi, Nakamura, Kuniyasu, Schamp, C T

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Crystal structure analysis of stacking faults through scanning transmission electron microscopy of β-Ga2O3 (001) layer grown via halide vapor phase epitaxy von Ogawa, Kenichi, Kobayashi, Kenji, Hasuike, Noriyuki, Isshiki, Toshiyuki

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Research on the TRM Kaizen Method for Governmental Organizations to Apply Technology Roadmapping as a Methodology to Achieve the Goals of Industrial Technology Policy von Watanabe, Masayoshi, Nakagami, Yuto, Isshiki, Toshiyuki, Kunugi, Motoshi, Yasunaga, Yuko

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Observation of Pair Structures of Threading Dislocation and Surface Defect in 4H-SiC Wafer by Mirror Projection Electron Microscopy von Hasegawa, Masaki, Isshiki, Toshiyuki

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Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method von Matsunami, Toru, Setoguchi, Yoshitaka, Isshiki, Toshiyuki, Yoshioka, Hisashi, Hamada, Shinkichi, Nakamura, Nobuhiko, Kawami, Hiroshi, Nishikawa, Kimito

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Study on Formation of Dislocation Contrast in 4H-SiC Wafer in Mirror Projection Electron Microscopy Image von Hasegawa, Masaki, Isshiki, Toshiyuki

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Broadband Optical Amplification of Waveguide Cut‐Off Mode in Polymer Waveguide Doped with Graphene Quantum Dots von Nagafusa, Tsukasa, Hara, Yuya, Nishio, Koji, Isshiki, Toshiyuki, Yamashita, Kenichi

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