High-purity GaSb epitaxial layers grown from Sb-rich solutions von ANAYAMA, C, TANAHASHI, T, KUWATSUKA, H, NISHIYAMA, S, ISOZUMI, S, NAKAJIMA, K

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Camptocormia in Japanese patients with Parkinson's disease: A multicenter study von Seki, Morinobu, Takahashi, Kazushi, Koto, Atsuo, Mihara, Ban, Morita, Yoko, Isozumi, Kazuo, Ohta, Kouichi, Muramatsu, Kazuhiro, Gotoh, Jun, Yamaguchi, Keiji, Tomita, Yutaka, Sato, Hideki, Nihei, Yoshihiro, Iwasawa, Satoko, Suzuki, Norihiro

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Development of isokinetic and iso-contractile exercise machine "MEM-MRB" using MR brake von Oda, K., Isozumi, S., Ohyama, Y., Tamida, K., Kikuchi, T., Furusho, J.

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Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy von UEDA, O, WAKAO, K, KOMIYA, S, YAMAGUCHI, A, ISOZUMI, S, UMEBU, I

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Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers von UEDA, O, WAKAO, K, YAMAGUCHI, A, ISOZUMI, S, KOMIYA, S

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Liquid phase epitaxial growth of Fe-doped semi-insulating InGaAsP lattice matched to InP over the entire composition range von KONDO, M, SUGAWARA, M, TANAHASHI, T, ISOZUMI, S, NAKAJIMA, K

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Room-temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy von WAKAO, K, NISHI, H, KUSUNOKI, T, ISOZUMI, S, OHSAKA, S

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A New Approach to Liquid Phase Electroepitaxy (LPEE) of III–V Compounds von Isozumi, S., Herman, C. J., Okamoto, A., Lagowski, J., Gatos, H. C.

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High-efficiency InGaAsP/InP flat-surface buried heterostructure distributed feedback lasers at 1.55 μm von WAKAO, K, KIHARA, K, KOTAKI, Y, KUSUNOKI, T, SUDO, H, ISOZUMI, S, YAMAKOSHI, S, ISHIKAWA, H, IMAI, H

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Positive feedback model of defect formation in gradually degraded GaAlAs light emitting devices von Kondo, K., Ueda, O., Isozumi, S., Yamakoshi, S., Akita, K., Kotani, T.

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InGaAsP/InGaP buried heterostructure lasers at 810 nm von VAKAO, K, ISOZUMI, S, NISHI, H, OHSAKA, S

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Study of defects in a rapidly degraded InGaAsP/InGaP double-heterostructure laser grown by liquid phase epitaxy von UEDA, O, WAKAO, K, YAMAGUCHI, A, KOMIYA, S, ISOZUMI, S, NISHI, H, UMEBU, I

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Dependence of Ga1-xAlxAs LPE layer thickness on solution composition von Isozumi, S., Komatsu, Y., Okazaki, N., Koyama, S., Kotani, T.

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Fine-time-granularity fast demand control of building HVAC facilities for future smart grid von Ninagawa, C., Kondo, S., Isozumi, S., Yoshida, H.

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A pulse shape discriminator for an X-ray proportional counter and its application to a coincidence experiment von Isozumi, Y., Isozumi, S.

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High efficient and compact side-air-flow type multi-air-conditioner von Isozumi, S, Yamashita, S, Kawashita, T, Otake, H, Yoshida, J, Nakamura, M

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Development of isokinetic exercise system using high performance MR fluid brake von Kikuchi, T., Oda, K., Ohyama, Y., Isozumi, S., Furusho, J.

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Composition-modulated structures in InGaAsP and InGaP liquid phase epitaxial layers grown on (001) GaAs substrates von UEDA, O, ISOZUMI, S, KOMIYA, S

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The acceptor level of Fe in In0.49Ga0.51P von TAKANOHASHI, T, ISOZUMI, S, SUGAWARA, M, NAKAJIMA, K

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Distributed feedback laser emitting at 1.3 µm for gigabit communication systems von Ishikawa, H., Soda, H., Wakao, K., Kihara, K., Kamite, K., Kotaki, Y., Matsuda, M., Sudo, H., Yamakoshi, S., Isozumi, S., Imai, H.

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