Vertical Power p-n Diodes Based on Bulk GaN von Kizilyalli, Isik C., Edwards, Andrew P., Aktas, Ozgur, Prunty, Thomas, Bour, David

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3.7 kV Vertical GaN PN Diodes von Kizilyalli, Isik C., Edwards, Andrew P., Nie, Hui, Bour, Dave, Prunty, Thomas, Disney, Don

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Vertical GaN Power Diodes With a Bilayer Edge Termination von Dickerson, Jeramy R., Allerman, Andrew A., Bryant, Benjamin N., Fischer, Arthur J., King, Michael P., Moseley, Michael W., Armstrong, Andrew M., Kaplar, Robert J., Kizilyalli, Isik C., Aktas, Ozgur, Wierer, Jonathan J.

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(Invited) Selective Area Doping in Gallium Nitride: A Retrospective of the ARPA-E PNDIODES Program von Kizilyalli, Isik C, Carlson, Eric P

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27.6% Conversion efficiency, a new record for single-junction solar cells under 1 sun illumination von Kayes, B. M., Hui Nie, Twist, R., Spruytte, S. G., Reinhardt, F., Kizilyalli, I. C., Higashi, G. S.

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400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V von Kizilyalli, Isik C., Edwards, Andrew P., Hui Nie, Phong Bui-Quang, Disney, Donald, Bour, Dave

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Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes von Mauch, Daniel L., Zutavern, Fred J., Delhotal, Jarod J., King, Michael P., Neely, Jason C., Kizilyalli, Isik C., Kaplar, Robert J.

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Power Electronic Devices and Systems Based on Bulk GaN Substrates von Cunningham, Daniel W., Carlson, Eric P., Kizilyalli, Isik C., Xu, Yan Zhi

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Impacts of Wide Band Gap Power Electronics on Photovoltaic System Design von Cunningham, Daniel W., Carlson, Eric P., Manser, Joseph S., Kizilyalli, Isik C.

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1.5-kV and 2.2-m \(\Omega \) -cm \(^\) Vertical GaN Transistors on Bulk-GaN Substrates von Hui Nie, Diduck, Quentin, Alvarez, Brian, Edwards, Andrew P., Kayes, Brendan M., Ming Zhang, Gangfeng Ye, Prunty, Thomas, Bour, Dave, Kizilyalli, Isik C.

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High Voltage Vertical GaN p-n Diodes With Avalanche Capability von Kizilyalli, Isik C., Edwards, Andrew P., Hui Nie, Disney, Don, Bour, Dave

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Reliability studies of vertical GaN devices based on bulk GaN substrates von Kizilyalli, Isik C., Bui-Quang, P., Disney, D., Bhatia, H., Aktas, Ozgur

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(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future von Kizilyalli, Isik C, Blum Spahn, Olga, Carlson, Eric P

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Vertical power diodes in bulk GaN von Disney, Don, Hui Nie, Edwards, Andrew, Bour, David, Shah, Hemal, Kizilyalli, Isik C.

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(Invited) Wide-Bandgap Semiconductor Based Power Electronic Devices for Energy Efficiency von Carlson, Eric P, Cunningham, Daniel W, Kizilyalli, Isik C.

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Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN PIN Diodes von Collins, K. C., King, M. P., Dickerson, J. R., Vizkelethy, G., Armstrong, A. M., Fischer, A. J., Allerman, A. A., Kaplar, R. J., Aktas, O., Kizilyalli, I. C., Talin, A. A., Leonard, F.

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Minimizing thermal resistance and collector-to-substrate capacitance in SiGe BiCMOS on SOI von Mastrapasqua, M., Palestri, P., Pacelli, A., Celler, G.K., Frei, M.R., Smith, P.R., Johnson, R.W., Bizzarro, L., Lin, W., Ivanov, T.G., Carroll, M.S., Kizilyalli, I.C., King, C.A.

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High Voltage Vertical GaN p-n Diodes With Avalanche Capability : GaN ELECTRONIC DEVICES von KIZILYALLI, Isik C, EDWARDS, Andrew P, HUI NIE, DISNEY, Don, BOUR, Dave

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(Invited) Current Topics in Electronic Devices Based on Wide Band-Gap Semiconductors for Power Applications and Energy Efficiency von Carlson, Eric P, Kizilyalli, Isik C., Heidel, Timothy D, Cunningham, Daniel W

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Giant isotope effect in hot electron degradation of metal oxide silicon devices von Hess, K., Kizilyalli, I.C., Lyding, J.W.

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