Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In2O3 von Stokey, Megan, Korlacki, Rafał, Knight, Sean, Ruder, Alexander, Hilfiker, Matthew, Galazka, Zbigniew, Irmscher, Klaus, Zhang, Yuxuan, Zhao, Hongping, Darakchieva, Vanya, Schubert, Mathias

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Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals von Galazka, Zbigniew, Ganschow, Steffen, Schewski, Robert, Irmscher, Klaus, Klimm, Detlef, Kwasniewski, Albert, Pietsch, Mike, Fiedler, Andreas, Schulze-Jonack, Isabelle, Albrecht, Martin, Schröder, Thomas, Bickermann, Matthias

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Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy von Baki, Aykut, Stöver, Julian, Schulz, Tobias, Markurt, Toni, Amari, Houari, Richter, Carsten, Martin, Jens, Irmscher, Klaus, Albrecht, Martin, Schwarzkopf, Jutta

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Cobalt as a promising dopant for producing semi-insulating β-Ga2O3 crystals: Charge state transition levels from experiment and theory von Seyidov, Palvan, Varley, Joel B., Galazka, Zbigniew, Chou, Ta-Shun, Popp, Andreas, Fiedler, Andreas, Irmscher, Klaus

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Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga2O3 Crystals von Seyidov, Palvan, Varley, Joel B., Frodason, Ymir Kalmann, Klimm, Detlef, Vines, Lasse, Galazka, Zbigniew, Chou, Ta‐Shun, Popp, Andreas, Irmscher, Klaus, Fiedler, Andreas

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Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals von Hartmann, Carsten, Wollweber, Juergen, Dittmar, Andrea, Irmscher, Klaus, Kwasniewski, Albert, Langhans, Frank, Neugut, Tom, Bickermann, Matthias

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Heading for brighter and faster β-Ga2O3 scintillator crystals von Drozdowski, Winicjusz, Makowski, Michał, Bachiri, Abdellah, Witkowski, Marcin E., Wojtowicz, Andrzej J., Swiderski, Lukasz, Irmscher, Klaus, Schewski, Robert, Galazka, Zbigniew

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Growth, characterization, and properties of bulk SnO2 single crystals von Galazka, Zbigniew, Uecker, Reinhard, Klimm, Detlef, Irmscher, Klaus, Pietsch, Mike, Schewski, Robert, Albrecht, Martin, Kwasniewski, Albert, Ganschow, Steffen, Schulz, Detlev, Guguschev, Christo, Bertram, Rainer, Bickermann, Matthias, Fornari, Roberto

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Evolution of impurity incorporation during ammonothermal growth of GaN von Sintonen, Sakari, Wahl, Stefanie, Richter, Susanne, Meyer, Sylke, Suihkonen, Sami, Schulz, Tobias, Irmscher, Klaus, Danilewsky, Andreas N., Tuomi, Turkka O., Stankiewicz, Romuald, Albrecht, Martin

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A consistent picture of excitations in cubic BaSnO3 revealed by combining theory and experiment von Aggoune, Wahib, Eljarrat, Alberto, Nabok, Dmitrii, Irmscher, Klaus, Zupancic, Martina, Galazka, Zbigniew, Albrecht, Martin, Koch, Christoph, Draxl, Claudia

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Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach von Chou, Ta-Shun, Bin Anooz, Saud, Grüneberg, Raimund, Irmscher, Klaus, Dropka, Natasha, Rehm, Jana, Tran, Thi Thuy Vi, Miller, Wolfram, Seyidov, Palvan, Albrecht, Martin, Popp, Andreas

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Low temperature thermoluminescence of β-Ga2O3 scintillator von Witkowski, Marcin E., Drozdowski, Konrad J., Makowski, Michał, Drozdowski, Winicjusz, Wojtowicz, Andrzej J., Irmscher, Klaus, Schewski, Robert, Galazka, Zbigniew

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Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE von Chou, Ta-Shun, Seyidov, Palvan, Bin Anooz, Saud, Grüneberg, Raimund, Tran, Thi Thuy Vi, Irmscher, Klaus, Albrecht, Martin, Galazka, Zbigniew, Schwarzkopf, Jutta, Popp, Andreas

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Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy von Baldini, Michele, Albrecht, Martin, Fiedler, Andreas, Irmscher, Klaus, Klimm, Detlef, Schewski, Robert, Wagner, Günter

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On the bulk β-Ga2O3 single crystals grown by the Czochralski method von Galazka, Zbigniew, Irmscher, Klaus, Uecker, Reinhard, Bertram, Rainer, Pietsch, Mike, Kwasniewski, Albert, Naumann, Martin, Schulz, Tobias, Schewski, Robert, Klimm, Detlef, Bickermann, Matthias

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Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method von Galazka, Zbigniew, Uecker, Reinhard, Klimm, Detlef, Irmscher, Klaus, Naumann, Martin, Pietsch, Mike, Kwasniewski, Albert, Bertram, Rainer, Ganschow, Steffen, Bickermann, Matthias

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3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped \beta -Ga2O3 MOSFETs von Green, Andrew J., Chabak, Kelson D., Heller, Eric R., Fitch, Robert C., Baldini, Michele, Fiedler, Andreas, Irmscher, Klaus, Wagner, Gunter, Galazka, Zbigniew, Tetlak, Stephen E., Crespo, Antonio, Leedy, Kevin, Jessen, Gregg H.

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Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions von Galazka, Zbigniew, Irmscher, Klaus, Schewski, Robert, Hanke, Isabelle M., Pietsch, Mike, Ganschow, Steffen, Klimm, Detlef, Dittmar, Andrea, Fiedler, Andreas, Schroeder, Thomas, Bickermann, Matthias

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Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al von Galazka, Zbigniew, Ganschow, Steffen, Fiedler, Andreas, Bertram, Rainer, Klimm, Detlef, Irmscher, Klaus, Schewski, Robert, Pietsch, Mike, Albrecht, Martin, Bickermann, Matthias

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Resonant electronic Raman scattering from Ir4+ ions in β-Ga2O3 von Seyidov, Palvan, Ramsteiner, Manfred, Galazka, Zbigniew, Irmscher, Klaus

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