A new definition of threshold voltage in Tunnel FETs von Boucart, Kathy, Ionescu, Adrian Mihai

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Double-Gate Tunnel FET With High- \kappa Gate Dielectric von Boucart, K., Ionescu, A.M.

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Ferroelectric Supercapacitors by Combining Polarization Switching and Negative Capacitance Effects for On-Chip Energy Storage von Kamaei, Sadegh, Ghini, Michele, Gilani, Ali, Gastaldi, Carlotta, Collette, Eloi, Ionescu, Adrian Mihai

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Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric von Boucart, Kathy, Ionescu, Adrian Mihai

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An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction von Kamaei, Sadegh, Saeidi, Ali, Jazaeri, Farzan, Rassekh, Amin, Oliva, Nicolo, Cavalieri, Matteo, Lambert, Benjamin, Ionescu, Adrian Mihai

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Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications von Bellando, Francesco, Mele, Leandro Julian, Palestri, Pierpaolo, Zhang, Junrui, Ionescu, Adrian Mihai, Selmi, Luca

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Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor von Gastaldi, Carlotta, Cavalieri, Matteo, Saeidi, Ali, O'Connor, Eamon, Kamaei, Sadegh, Rosca, Teodor, Stolichnov, Igor, Ionescu, Adrian Mihai

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RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric von BADIA, Montserrat Fernández-Bolaños, BUITRAGO, Elizabeth, MIHAI IONESCU, Adrian

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Switching Behavior Constraint in the Heterogate Electron-Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations von Padilla, Jose L., Alper, Cem, Gamiz, Francisco, Ionescu, Adrian Mihai

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A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition von Casu, Emanuele Andrea, Muller, Andrei A., Cavalieri, Matteo, Fumarola, Alessandro, Ionescu, Adrian Mihai, Fernandez-Bolanos, Montserrat

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Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse von Oliva, Nicoló, Casu, Emanuele Andrea, Yan, Chen, Krammer, Anna, Rosca, Teodor, Magrez, Arnaud, Stolichnov, Igor, Schueler, Andreas, Martin, Olivier J. F., Ionescu, Adrian Mihai

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Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET von Alper, Cem, Lattanzio, Livio, De Michielis, Luca, Palestri, Pierpaolo, Selmi, Luca, Ionescu, Adrian Mihai

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Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors von Zhang, Junrui, Rupakula, Maneesha, Bellando, Francesco, Garcia Cordero, Erick, Longo, Johan, Wildhaber, Fabien, Herment, Guillaume, Guérin, Höel, Ionescu, Adrian Mihai

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Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor von Padilla, Jose L., Medina-Bailon, Cristina, Marquez, Carlos, Sampedro, Carlos, Donetti, Luca, Gamiz, Francisco, Ionescu, Adrian Mihai

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Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor von Padilla, Jose L., Alper, Cem, Gamiz, Francisco, Ionescu, Adrian Mihai

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Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs von Boucart, K., Riess, W., Ionescu, A.M.

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Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters von Tsamados, Dimitrios, Singh Chauhan, Yogesh, Eggimann, Christoph, Akarvardar, Kerem, Philip Wong, H.-S., Mihai Ionescu, Adrian

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The Vibrating Body Transistor von Grogg, D, Ionescu, A M

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Analytical modeling of single electron transistor for hybrid CMOS-SET analog IC design von Mahapatra, S., Vaish, V., Wasshuber, C., Banerjee, K., Ionescu, A.M.

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Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic von Akarvardar, K., Eggimann, C., Tsamados, D., Singh Chauhan, Y., Wan, G.C., Ionescu, A.M., Howe, R.T., Wong, H.-S.P.

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